Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

Catalyst synthesis with precise control over the structure of catalytic active sites at the atomic
level is of essential importance for the scientific understanding of reaction mechanisms and …

The coating of complex three-dimensional structures with ultrathin metal films is of great
interest for current technical applications, particularly in microelectronics, as well as for basic …

Recent trends in the microelectronics industry are requiring the growth of metallic first row
transition metal films by the atomic layer deposition (ALD) method. The ALD growth of noble …

Tailoring catalysts with atomic level control over active sites and composite structures is of
great importance for advanced catalysis. This review focuses on the recent development of …

Copper and binary copper oxide thin films are key materials for microelectronic,
optoelectronic, and sensing devices. Herein, we report innovative atmospheric pressure …

The atomic layer deposition of copper metal thin films was achieved using a three precursor
sequence entailing Cu (OCHMeCH2NMe2) 2, formic acid, and hydrazine. A constant growth …

The continued dominance of copper in microelectronic manufacturing is due in part to the
techniques that have kept pace with the relentless trend towards smaller feature sizes. Pure …

The atomic layer deposition (ALD) of Cu metal films was carried out by a two-step process
with Cu (OCHMeCH2NMe2) 2 and BH3 (NHMe2) on Ru substrates and by a three-step …

Treatment of MCl2 (M= Cr, Mn, Fe, Co, Ni) with 2 equiv of lithium metal and 1, 4-di-tert-butyl-
1, 3-diazadiene (tBu2DAD) in tetrahydrofuran at ambient temperature afforded Cr …