Gallium nitride vertical power devices on foreign substrates: a review and outlook
Vertical gallium nitride (GaN) power devices have attracted increased attention due to their
superior high-voltage and high-current capacity as well as easier thermal management than …
superior high-voltage and high-current capacity as well as easier thermal management than …
Recent advances in development of magnetic garnet thin films for applications in spintronics and photonics
Magnetic garnets (MG) are insulators with superior magnetic and optical properties, such as
high Curie temperature, highly tunable bulk perpendicular magnetic anisotropy (PMA) …
high Curie temperature, highly tunable bulk perpendicular magnetic anisotropy (PMA) …
Mass transfer techniques for large-scale and high-density microLED arrays
Inorganic-based micro light-emitting diodes (microLEDs) offer more fascinating properties
and unique demands in next-generation displays. However, the small size of the microLED …
and unique demands in next-generation displays. However, the small size of the microLED …
Improved heat dissipation in gallium nitride light-emitting diodes with embedded graphene oxide pattern
The future of solid-state lighting relies on how the performance parameters will be improved
further for develo** high-brightness light-emitting diodes. Eventually, heat removal is …
further for develo** high-brightness light-emitting diodes. Eventually, heat removal is …
Ohmic-contact technology for GaN-based light-emitting diodes: Role of p-type contact
JO Song, JS Ha, TY Seong - IEEE transactions on electron …, 2009 - ieeexplore.ieee.org
GaN-based semiconductors are of great technological importance for the fabrication of
optoelectronic devices, such as light-emitting diodes (LEDs) and laser diodes. The further …
optoelectronic devices, such as light-emitting diodes (LEDs) and laser diodes. The further …
High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate
We demonstrate a state-of-the-art high-efficiency GaN-based vertical light-emitting diode
(VLED) grown on a transparent and conductive (− 201)-oriented (β-Ga2O3) substrate …
(VLED) grown on a transparent and conductive (− 201)-oriented (β-Ga2O3) substrate …
Wafer-scale transfer route for top–down III-nitride nanowire LED arrays based on the femtosecond laser lift-off technique
The integration of gallium nitride (GaN) nanowire light-emitting diodes (nanoLEDs) on
flexible substrates offers opportunities for applications beyond rigid solid-state lighting (eg …
flexible substrates offers opportunities for applications beyond rigid solid-state lighting (eg …
A review of direct drive proportional electrohydraulic spool valves: industrial state-of-the-art and research advancements
This paper reviews the state of the art of directly driven proportional directional hydraulic
spool valves, which are widely used hydraulic components in the industrial and …
spool valves, which are widely used hydraulic components in the industrial and …
[HTML][HTML] Layer-scale and chip-scale transfer techniques for functional devices and systems: a review
Z Gong - Nanomaterials, 2021 - mdpi.com
Hetero-integration of functional semiconductor layers and devices has received strong
research interest from both academia and industry. While conventional techniques such as …
research interest from both academia and industry. While conventional techniques such as …
Transparent, flexible piezoelectric nanogenerator based on GaN membrane using electrochemical lift-off
A transparent and flexible piezoelectric nanogenerator (TF PNG) is demonstrated based on
a GaN membrane fabricated by electrochemical lift-off. Under shear stress on the TF PNG by …
a GaN membrane fabricated by electrochemical lift-off. Under shear stress on the TF PNG by …