Abstract Two-dimensional (2D) semiconductors have attracted tremendous interest as
atomically thin channels that could facilitate continued transistor scaling. However, despite …

Rapid digital technology advancement has resulted in a tremendous increase in computing
tasks imposing stringent energy efficiency and area efficiency requirements on next …

Abstract The International Roadmap for Devices and Systems (IRDS) forecasts that, for
silicon-based metal–oxide–semiconductor (MOS) field-effect transistors (FETs), the scaling …

The development of silicon semiconductor technology has produced breakthroughs in
electronics—from the microprocessor in the late 1960s to early 1970s, to automation …

Material integration strategies, such as epitaxial growth, usually involve strong chemical
bonds and are typically limited to materials with strict structure matching and processing …

Abstract Two-dimensional materials (2DMs) have been used widely in constructing
photodetectors (PDs) because of their advantages in flexible integration and ultrabroad …

Triggered by the growing needs of develo** semiconductor devices at ever‐decreasing
scales, strain engineering of 2D materials has recently seen a surge of interest. The goal of …

Abstract 2D nanomaterials with unique nanosheet structures, large surface areas, and
extraordinary physicochemical properties have attracted tremendous interest. In the area of …

Two-dimensional semiconductors can be used to build next-generation electronic devices
with ultrascaled channel lengths. However, semiconductors need to be integrated with high …

Vertical transistors—in which the channel length is determined by the thickness of the
semiconductor—are of interest in the development of next-generation electronic devices …