Improved packaging of power module with low-permittivity material for low common-mode noise and high reliability
This article proposes a novel power module configuration which replaces a part of the
bottom copper layer of a direct-bonded copper by low-permittivity (low-ϵ) epoxy. The …
bottom copper layer of a direct-bonded copper by low-permittivity (low-ϵ) epoxy. The …
EMI mitigation of GaN power inverter leg by local shielding techniques
This article presents local shielding techniques applied to a half-bridge inverter leg with the
aim to reduce the common-mode (CM) current noise at converter's dc input. The research …
aim to reduce the common-mode (CM) current noise at converter's dc input. The research …
EMI mitigation with stacking DBC substrate for high voltage power module
The fast switching speed of high voltage silicon carbide (SiC) Metal-Oxide-Semiconductor
Field-Effect Transistors (MOSFETs) can achieve high power density but are accompanied by …
Field-Effect Transistors (MOSFETs) can achieve high power density but are accompanied by …
Power module with low common-mode noise and high reliability
Silicon carbide devices provide higher switching speed and switching frequency than their
silicon counterpart. However, these characteristics generate significant electromagnetic …
silicon counterpart. However, these characteristics generate significant electromagnetic …
Electro-Thermal Optimization of Common-Mode Screen for Organic Substrate-Based SiC Power Module
The past few years have seen organic substrates become a popular alternative to ceramics
substrates for power modules. The design flexibility of organic substrates allows for a high …
substrates for power modules. The design flexibility of organic substrates allows for a high …
Design and evaluation of a 1200-V/200-A SiC three-level NPC power module
H Zhang, Y Wu, H Li, S Yin, S **, S Lin… - IEEE Transactions …, 2023 - ieeexplore.ieee.org
The silicon carbide (SiC) power module is one of the most popular semiconductor devices in
industrial applications with the enhanced current rating. In this paper, a 1200-V/200-A SiC …
industrial applications with the enhanced current rating. In this paper, a 1200-V/200-A SiC …
SiC Power Module Design using Flip Chip Configuration to Reduce Common-Mode Noise
T Warnakulasooriya, S Choi… - 2024 IEEE Energy …, 2024 - ieeexplore.ieee.org
Silicon carbide (SiC) semiconductors have higher switching speeds compared to their
Silicon counterparts, which increases common mode (CM) noise. This study proposes a new …
Silicon counterparts, which increases common mode (CM) noise. This study proposes a new …
SiC Power Module Design with a Low-Permittivity Material to Reduce Common-Mode Noise
This study proposes a silicon carbide (SiC) power module design to reduce common-mode
(CM) noise. A low permittivity material replaces a part of the bottom copper layer of a direct …
(CM) noise. A low permittivity material replaces a part of the bottom copper layer of a direct …
Packaging of SiC Power Module with a Low-Permittivity Material to Reduce Capacitive Coupling
This study proposes a new power module configuration to reduce CM noise. The proposed
module utilized a low permittivity material which replaces a part of bottom Cu layer. The …
module utilized a low permittivity material which replaces a part of bottom Cu layer. The …
Metrology considerations for medium-voltage wide bandgap power electronics
CD New - 2022 - search.proquest.com
Transitioning to medium-voltage (MV) power electronics presents a significant opportunity
for reducing ampacity requirements, and therefore cable weight, for large transportation …
for reducing ampacity requirements, and therefore cable weight, for large transportation …