GaN electronics constitutes a revolutionary technology with power handling capabilities that
amply exceed those of Si and other semiconductors in many applications. RF, microwave …

In this paper we review the subject of oxide breakdown (BD), focusing our attention on the
case of the gate dielectrics of interest for current Si microelectronics, ie, Si oxides or …

The robustness of peer-to-peer (P2P) networks, in particular of DHT-based overlay
networks, suffers significantly when a Sybil attack is performed. We tackle the issue of Sybil …

A new physics-based model of leakage current suitable for MOS and Flash memory gate
oxide is presented in this paper. This model, which assumes the multiphonon trap-assisted …

When the gate insulator of a metal–oxide–semiconductor structure is subjected to electrical
stress, traps or defects are progressively generated inside the oxide that eventually lead to …

Gate-all-around (GAA) MOSFETs use multiple nanowires (NWs) to achieve target, along
with excellent 3-D electrostatic control of the channel. Although the self-heating effect has …

Silicon-based photoelectrodes for solar fuel production have attracted great interest over the
past decade, with the major challenge being silicon's vulnerability to corrosion. A metal …

A theory of the statistical origin of soft and hard breakdown, that can explain a wide range of
experimental data, is proposed. The theory is based on the simple premise that the severity …

The dielectric dispersion of a material holds significant importance for the understanding of
basic material characteristics and the design parameters of a functional device. Here, the …

Integrated analog circuit design in nanometer CMOS technologies brings forth new and
significant reliability challenges. Ever-increasing process variability effects and transistor …