Resistive switching materials for information processing
The rapid increase in information in the big-data era calls for changes to information-
processing paradigms, which, in turn, demand new circuit-building blocks to overcome the …
processing paradigms, which, in turn, demand new circuit-building blocks to overcome the …
Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories
Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …
in the memory arena over the last two decades. Its dielectric properties have been …
Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films
The recent progress in ferroelectricity and antiferroelectricity in HfO2‐based thin films is
reported. Most ferroelectric thin film research focuses on perovskite structure materials, such …
reported. Most ferroelectric thin film research focuses on perovskite structure materials, such …
A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films
Hafnia-based thin films are a favoured candidate for the integration of robust ferroelectricity
at the nanoscale into next-generation memory and logic devices. This is because their …
at the nanoscale into next-generation memory and logic devices. This is because their …
On the structural origins of ferroelectricity in HfO2 thin films
Here, we present a structural study on the origin of ferroelectricity in Gd doped HfO 2 thin
films. We apply aberration corrected high-angle annular dark-field scanning transmission …
films. We apply aberration corrected high-angle annular dark-field scanning transmission …
Stabilizing the ferroelectric phase in doped hafnium oxide
The ferroelectric properties and crystal structure of doped HfO 2 thin films were investigated
for different thicknesses, electrode materials, and annealing conditions. Metal-ferroelectric …
for different thicknesses, electrode materials, and annealing conditions. Metal-ferroelectric …
HfO2-based ferroelectrics: From enhancing performance, material design, to applications
Nonvolatile memories are in strong demand due to the desire for miniaturization, high-speed
storage, and low energy consumption to fulfill the rapid developments of big data, the …
storage, and low energy consumption to fulfill the rapid developments of big data, the …
Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances
Ferroelectricity in HfO 2-based materials, especially Hf 0.5 Zr 0.5 O 2 (HZO), is today one of
the most attractive topics because of its wide range of applications in ferroelectric random …
the most attractive topics because of its wide range of applications in ferroelectric random …
The Electrode‐Ferroelectric Interface as the Primary Constraint on Endurance and Retention in HZO‐Based Ferroelectric Capacitors
Ferroelectric hafnium‐zirconium oxide is one of the most relevant CMOS‐compatible
materials for next‐generation, non‐volatile memory devices. Nevertheless, performance …
materials for next‐generation, non‐volatile memory devices. Nevertheless, performance …
Structural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO2 Thin Films
Since 2011, ferroelectric HfO2 has attracted growing interest in both fundamental and
application oriented groups. In this material, noteworthy wake‐up and fatigue effects alter …
application oriented groups. In this material, noteworthy wake‐up and fatigue effects alter …