Composition Dependent Electrical Transport in Si1−xGex Nanosheets with Monolithic Single‐Elementary Al Contacts
Si1− xGex is a key material in modern complementary metal‐oxide‐semiconductor and
bipolar devices. However, despite considerable efforts in metal‐silicide and‐germanide …
bipolar devices. However, despite considerable efforts in metal‐silicide and‐germanide …
Al–Ge–Al nanowire heterostructure: from single‐hole quantum dot to Josephson effect
Superconductor–semiconductor–superconductor heterostructures are attractive for both
fundamental studies of quantum phenomena in low‐dimensional hybrid systems as well as …
fundamental studies of quantum phenomena in low‐dimensional hybrid systems as well as …
Silicon–Aluminum Phase-Transformation-Induced Superconducting Rings
The development of devices that exhibit both superconducting and semiconducting
properties is an important endeavor for emerging quantum technologies. We investigate …
properties is an important endeavor for emerging quantum technologies. We investigate …
Exploration of Charge Carrier Transport in Si and Ge based Schottky Barrier Field-Effect Transistors
R Behrle - 2024 - repositum.tuwien.at
In the quest to further increase the capabilities of modern transistors in terms of functional
diversification and enhancing switching speeds as well as reducing energy consumption …
diversification and enhancing switching speeds as well as reducing energy consumption …
Thermally propagated Al contacts on SiGe nanowires characterized by electron beam induced current in a scanning transmission electron microscope
Here, we use electron beam induced current (EBIC) in a scanning transmission electron
microscope to characterize the structure and electronic properties of Al/SiGe and Al/Si …
microscope to characterize the structure and electronic properties of Al/SiGe and Al/Si …
[PDF][PDF] Thermally propagated Al contacts on SiGe nanowires characterized by electron beam induced current in a scanning transmission electron microscope
EM den Hertog, D Cooper - researchgate.net
Here, we use electron beam induced current in a scanning transmission electron
microscope to characterize the structure and electronic properties of Al/SiGe and Al/Si …
microscope to characterize the structure and electronic properties of Al/SiGe and Al/Si …