Wurtzite and fluorite ferroelectric materials for electronic memory

KH Kim, I Karpov, RH Olsson III, D Jariwala - Nature Nanotechnology, 2023 - nature.com
Ferroelectric materials, the charge equivalent of magnets, have been the subject of
continued research interest since their discovery more than 100 years ago. The …

A full spectrum of computing-in-memory technologies

Z Sun, S Kvatinsky, X Si, A Mehonic, Y Cai… - Nature Electronics, 2023 - nature.com
Computing in memory (CIM) could be used to overcome the von Neumann bottleneck and to
provide sustainable improvements in computing throughput and energy efficiency …

[HTML][HTML] Spintronics based random access memory: a review

S Bhatti, R Sbiaa, A Hirohata, H Ohno, S Fukami… - Materials today, 2017 - Elsevier
This article reviews spintronics based memories, in particular, magnetic random access
memory (MRAM) in a systematic manner. Debuted as a humble 4 Mb product by FreeScale …

Spintronic devices: a promising alternative to CMOS devices

P Barla, VK Joshi, S Bhat - Journal of Computational Electronics, 2021 - Springer
The field of spintronics has attracted tremendous attention recently owing to its ability to offer
a solution for the present-day problem of increased power dissipation in electronic circuits …

Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications

B Dieny, M Chshiev - Reviews of Modern Physics, 2017 - APS
Spin electronics is a rapidly expanding field stimulated by a strong synergy between
breakthrough basic research discoveries and industrial applications in the fields of magnetic …

Skyrmion-electronics: An overview and outlook

W Kang, Y Huang, X Zhang, Y Zhou… - Proceedings of the …, 2016 - ieeexplore.ieee.org
The well-known empirical phenomenon known as Moore's Law has held true for the past
half century. However, it is beginning to break down, owing to limitations arising from …

Field-free magnetization reversal by spin-Hall effect and exchange bias

A van den Brink, G Vermijs, A Solignac, J Koo… - Nature …, 2016 - nature.com
As the first magnetic random access memories are finding their way onto the market, an
important issue remains to be solved: the current density required to write magnetic bits …

Overview of beyond-CMOS devices and a uniform methodology for their benchmarking

DE Nikonov, IA Young - Proceedings of the IEEE, 2013 - ieeexplore.ieee.org
Multiple logic devices are presently under study within the Nanoelectronic Research
Initiative (NRI) to carry the development of integrated circuits beyond the complementary …

[HTML][HTML] Magnetoelectrics for magnetic sensor applications: status, challenges and perspectives

Y Wang, J Li, D Viehland - Materials Today, 2014 - Elsevier
The magnetoelectric (ME) effect, with cross-correlation coupling between magnetic and
electric degrees of freedom, is associated with two promising application scenarios …

Ultrafast magnetization reversal by picosecond electrical pulses

Y Yang, RB Wilson, J Gorchon, CH Lambert… - Science …, 2017 - science.org
The field of spintronics involves the study of both spin and charge transport in solid-state
devices. Ultrafast magnetism involves the use of femtosecond laser pulses to manipulate …