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Wurtzite and fluorite ferroelectric materials for electronic memory
Ferroelectric materials, the charge equivalent of magnets, have been the subject of
continued research interest since their discovery more than 100 years ago. The …
continued research interest since their discovery more than 100 years ago. The …
A full spectrum of computing-in-memory technologies
Computing in memory (CIM) could be used to overcome the von Neumann bottleneck and to
provide sustainable improvements in computing throughput and energy efficiency …
provide sustainable improvements in computing throughput and energy efficiency …
[HTML][HTML] Spintronics based random access memory: a review
This article reviews spintronics based memories, in particular, magnetic random access
memory (MRAM) in a systematic manner. Debuted as a humble 4 Mb product by FreeScale …
memory (MRAM) in a systematic manner. Debuted as a humble 4 Mb product by FreeScale …
Spintronic devices: a promising alternative to CMOS devices
The field of spintronics has attracted tremendous attention recently owing to its ability to offer
a solution for the present-day problem of increased power dissipation in electronic circuits …
a solution for the present-day problem of increased power dissipation in electronic circuits …
Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications
Spin electronics is a rapidly expanding field stimulated by a strong synergy between
breakthrough basic research discoveries and industrial applications in the fields of magnetic …
breakthrough basic research discoveries and industrial applications in the fields of magnetic …
Skyrmion-electronics: An overview and outlook
The well-known empirical phenomenon known as Moore's Law has held true for the past
half century. However, it is beginning to break down, owing to limitations arising from …
half century. However, it is beginning to break down, owing to limitations arising from …
Field-free magnetization reversal by spin-Hall effect and exchange bias
A van den Brink, G Vermijs, A Solignac, J Koo… - Nature …, 2016 - nature.com
As the first magnetic random access memories are finding their way onto the market, an
important issue remains to be solved: the current density required to write magnetic bits …
important issue remains to be solved: the current density required to write magnetic bits …
Overview of beyond-CMOS devices and a uniform methodology for their benchmarking
Multiple logic devices are presently under study within the Nanoelectronic Research
Initiative (NRI) to carry the development of integrated circuits beyond the complementary …
Initiative (NRI) to carry the development of integrated circuits beyond the complementary …
[HTML][HTML] Magnetoelectrics for magnetic sensor applications: status, challenges and perspectives
The magnetoelectric (ME) effect, with cross-correlation coupling between magnetic and
electric degrees of freedom, is associated with two promising application scenarios …
electric degrees of freedom, is associated with two promising application scenarios …
Ultrafast magnetization reversal by picosecond electrical pulses
The field of spintronics involves the study of both spin and charge transport in solid-state
devices. Ultrafast magnetism involves the use of femtosecond laser pulses to manipulate …
devices. Ultrafast magnetism involves the use of femtosecond laser pulses to manipulate …