Size dependent characteristics of AlGaN-based deep ultraviolet micro-light-emitting-diodes
AlGaN-based deep ultraviolet (DUV) micro-light-emitting diodes (μLEDs) with emission
wavelengths between 277 and 304 nm with mesa dimensions down to 20 μm were …
wavelengths between 277 and 304 nm with mesa dimensions down to 20 μm were …
Deep ultraviolet light-emitting diodes based on a well-ordered AlGaN nanorod array
The nanorod structure is an alternative scheme to develop high-efficiency deep ultraviolet
light-emitting diodes (DUV LEDs). In this paper, we first report the electrically injected 274 …
light-emitting diodes (DUV LEDs). In this paper, we first report the electrically injected 274 …
Thermal Droop Effects in AlGaN Ultraviolet-C Light-Emitting Diodes
Al-rich AlGaN based light-emitting diodes (LEDs) operating in the ultraviolet-C (UV-C)
spectral wavelength (< 280 nm) are important for various critical applications. However, to …
spectral wavelength (< 280 nm) are important for various critical applications. However, to …
Diffusion-driven charge transport in light emitting devices
Almost all modern inorganic light-emitting diode (LED) designs are based on double
heterojunctions (DHJs) whose structure and current injection principle have remained …
heterojunctions (DHJs) whose structure and current injection principle have remained …
[PDF][PDF] Photoluminescence efficiency in wide-band-gap iii-nitride semiconductors and their heterostructures
J Jurkevičius - 2016 - epublications.vu.lt
III-nitrides are arguably already a classic semiconductor material group. The period of
intensive research of III-nitride semiconductors started by Nobel Prize winners Shuji …
intensive research of III-nitride semiconductors started by Nobel Prize winners Shuji …
Influence of Carrier Localization on Efficiency Droop and Stimulated Emission in AlGaN Quantum Wells
G Tamulaitis - Handbook of Solid-State Lighting and LEDs, 2017 - taylorfrancis.com
Carrier localization is a phenomenon substantially affecting the carrier dynamics in AlGaN
epitaxial layers and quantum well structures. In this chapter, the origins of the carrier …
epitaxial layers and quantum well structures. In this chapter, the origins of the carrier …
Fotoliuminescencijos našumas plačiatarpiuose iii grupės nitridiniuose puslaidininkiuose ir jų heterodariniuose
J Jurkevičius - 2016 - epublications.vu.lt
Abstract [eng] This doctoral thesis presents a study of photoluminescence efficiency in wide-
band-gap III-nitride semiconductors. The work is aimed at investigation of efficiency-limiting …
band-gap III-nitride semiconductors. The work is aimed at investigation of efficiency-limiting …