Recent advances in polymer/metal/metal oxide hybrid nanostructures for catalytic applications: A review

ME El-Naggar, K Shoueir - Journal of Environmental Chemical …, 2020 - Elsevier
This review presents the essence of polymer and polymer/metal oxide hybrid nanoparticles
in catalytic applications. The weakness of the modern photocatalytic system such as low …

The structure and properties of metal-semiconductor interfaces

LJ Brillson - Surface Science Reports, 1982 - Elsevier
In this review, we examine the contributions of surface science research to the
understanding of metal-semiconductor interfaces. In particular, we survey conventional …

Reaction of thin metal films with SiO2 substrates

R Pretorius, JM Harris, MA Nicolet - Solid-State Electronics, 1978 - Elsevier
Abstract Thin films of Co, Cr, Cu, Fe, Hf, Mn, Nb, Ni, Pd, Pt, Ti, V and Zr vacuum-deposited on
SiO 2 substrates of thermally oxidized Si wafers and/or fused quartz were annealed under …

The preparation, characterization and applications of silicon nitride thin films

CE Morosanu - Thin Solid Films, 1980 - Elsevier
4.1. Kinetics of thin layer deposition 4.2. Kinetics of the gas phase reaction 4.3.
Determination of the reaction order 4.4. Reaction mechanism 4.5. Effect of the experimental …

Physical and chemical characteristics of lead-iron phosphate nuclear waste glasses

BC Sales, LA Boatner - Journal of non-crystalline solids, 1986 - Elsevier
Experimental determinations of the properties of lead-iron phosphate glasses pertinent to
their application to the problem of the permanent disposal of high-level nuclear wastes have …

[HTML][HTML] Thin conducting films: preparation methods, optical and electrical properties, and emerging trends, challenges, and opportunities

RK Sharme, M Quijada, M Terrones, MM Rana - Materials, 2024 - pmc.ncbi.nlm.nih.gov
Thin conducting films are distinct from bulk materials and have become prevalent over the
past decades as they possess unique physical, electrical, optical, and mechanical …

Breaking the do** limit in silicon by deep impurities

M Wang, A Debernardi, Y Berencen, R Heller, C Xu… - Physical Review …, 2019 - APS
n-type do** in Si by shallow impurities, such as P, As, and Sb, exhibits an intrinsic limit
due to the Fermi-level pinning via defect complexes at high do** concentrations. Here, we …

Interactions in the Co/Si thin‐film system. I. Kinetics

SS Lau, JW Mayer, KN Tu - Journal of Applied Physics, 1978 - pubs.aip.org
Interactions in the Co/Si thin‐film system were investigated by MeV backscattering and x‐ray‐
diffraction techniques. It was found that Si diffuses through the Co layer and accumulates at …

Z-scan determination of the third-order optical nonlinearity of gold:silica nanocomposites

S Debrus, J Lafait, M May, N Pinçon, D Prot… - Journal of Applied …, 2000 - pubs.aip.org
Third-order nonlinear optical properties of Au: SiO 2 thin films were studied at the surface
plasmon resonance wavelength by the z-scan technique using a nanosecond laser. Films …

Kinetics and mechanism of platinum silicide formation on silicon

JM Poate, TC Tisone - Applied Physics Letters, 1974 - pubs.aip.org
The growth of platinum silicide layers has been observed using Rutherford backscattering.
By simultaneous observation of the relative movement of the Pt2Si and PtSi interfaces, it is …