Wide bandgap nitride semiconductors have recently attracted a great level of attention
owing to their direct bandgaps in the visible to ultraviolet regions of the spectrum as emitters …

The origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field
effect transistors is examined theoretically and experimentally. Based on an analysis of the …

The present paper attempts an overview of a presently very active research field: the III-
nitrides and their interesting possibilities for a range of device applications employing …

The formation of the two-dimensional electron gas (2DEG) in unintentionally doped Al x Ga
1− x N/GaN (x⩽ 0.31) heterostructures grown by rf plasma-assisted molecular-beam epitaxy …

We report on the AlGaN/GaN metal oxide semiconductor heterostructure field effect
transistor (MOS-HFET) and present the results of the comparative studies of this device and …

We report on record electron mobility values measured in lightly Si doped homoepitaxial β-
Ga 2 O 3 grown by metal-organic chemical vapor deposition. The transport properties of the …

The piezoelectric and spontaneous polarization of wurtzite Sc x Al 1− x N, Ga x Al 1− x N,
and In x Al 1− x N ternary compounds dramatically affects the electrical properties of …

High electron mobility transistors (HEMT) based on GaN/AlGaN-heterostructures have been
fitted with catalytically active platinum (Pt) gate electrodes to induce gas sensitivity. Due to …

We present the results of our experimental and theoretical studies concerning the
temperature dependence of electron mobility in a two-dimensional electron gas (2DEG) …

In this article, we discuss parameters influencing (a) the properties of thin Al x Ga 1− x N
layers grown by metalorganic chemical vapor deposition and (b) the electrical properties of …