In this paper, we have investigated device reliability by studying the impact of interface traps,
both donor (positive interface charges) and acceptor (negative interface charges), present at …

This paper investigates the impact of different interface trap charges (ITCs) on dual-material
gate-oxide-stack double-gate TFET (DMGOSDG-TFET) by introducing localized charges …

In this paper, the impacts of interface traps on tunneling FET (TFET) are examined in terms
of different trap energies and distributions, charge neutrality level (CNL), and effects of …

This paper investigates the reliability of PINgate-all-around (GAA)-tunnel field-effect
transistor (TFET) with N±source pocket. The reliability of the PNIN-GAA-TFET is examined …

This manuscript exclusively addresses the reliability concern of a double-drain vertical TFET
(DD-VTFET) by analysing the influence of interface trap charges and variation in ambient …

In this paper, we investigate the effect of interface trap charges on the variation of
heterogeneous gate dielectric junctionless-tunnel FET (JL-TFET) by introducing both donor …

In this work, dc characteristic variations of nanosheet (NS) gate-all-around (GAA)
complementary FET (CFET) induced by process fluctuations are investigated for the first …

In this paper, the electrical parameters are evaluated for the variations of temperature in
Gate Overlap Ge source Step Shape Double Gate TFET (GO-Ge-SSDG-TFET) under the …

In this paper, we investigate for the first time effect of positive (donor) and negative
(acceptor) interface trap charges on the performance of proposed heterogeneous gate …

In this paper, the temperature associated reliability issues of heterogeneous gate dielectric-
gate all around-tunnel FET (HD GAA TFET) has been addressed, and the results are …