p-AlInN electron blocking layer for AlGaN-based deep-ultraviolet light-emitting diode

MN Sharif, MI Niass, JJ Liou, F Wang, Y Liu - Superlattices and …, 2021 - Elsevier
Abstract Commonly, the Al-rich AlGaN layer acts as electron blocking layer (EBL) to block
the overflow of electrons from the active region in conventional AlGaN deep-ultraviolet …

Improving the hole injection efficiency in AlGaN DUV LEDs by minimizing the band offset at the p-EBL/hole supplier interface

W Tian, M Liu, S Li, C Liu - Optical Materials Express, 2023 - opg.optica.org
In AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs), the large valence band
offset between the Al-rich electron blocking layer (EBL) and p-AlGaN hole supplier weakens …

Optimized carrier confinement in deep-ultraviolet light-emitting diodes with AlInGaN/AlInN superlattice electron blocking layer

T Jamil, M Usman - Materials Science and Engineering: B, 2022 - Elsevier
The optoelectronic characteristics of AlGaN-based deep ultraviolet light-emitting diodes
(DUV LEDs) with AlInGaN/AlInN superlattices electron blocking layer (EBL) are numerically …

Sandwiching electron blocking layer with p-AlInN layer to enhance hole injection in AlGaN-based deep ultraviolet light-emitting diodes

T Jamil, M Usman, H Jamal - Materials Research Bulletin, 2021 - Elsevier
This work reports the enhanced optoelectronic performance of AlGaN-based deep ultraviolet
light-emitting diodes (DUV LEDs) by sandwiching p-EBL with thin p-AlInN layers. The …

Deactivating environmental strains of Escherichia coli, Enterococcus faecalis and Clostridium perfringens from a real wastewater effluent using UV-LEDs

A Kamel, M Fuentes, AM Palacios, MJ Rodrigo, M Vivar - Heliyon, 2022 - cell.com
Environmental bacteria strains are known to be more resistant but studies on UV-LEDs are
scarce, especially for Clostridium perfringens and Enterococcus faecalis. UV-LEDs of …

On the enhancement of carrier injection efficiency by employing AlInN last quantum barrier in 277 nm ultraviolet light-emitting diodes

T Jamil, M Usman, H Jamal - Journal of Applied Physics, 2021 - pubs.aip.org
The AlInN last quantum barrier (LQB) has been employed instead of conventional AlGaN in
ultraviolet light-emitting diodes (UV LEDs). The simulation results reveal that p-doped AlInN …

Carrier confinement in 232 nm emission AlGaN-based ultraviolet light-emitting diodes with p-AlN layer

M Usman, T Jamil, S Saeed - Materials Science and Engineering: B, 2023 - Elsevier
The influence of the p-AlN layer on the electron leakage, in 232 nm ultraviolet wavelength
light-emitting diodes, has been numerically investigated. We sandwiched last quantum …

High radiative recombination rate of AlGaN-based deep ultraviolet light-emitting diodes with AlInGaN/AlInN/AlInGaN tunnel electron blocking layer

T Jamil, M Usman, H Jamal, S Khan… - Journal of Electronic …, 2021 - Springer
In this study, an aluminum indium gallium nitride (AlInGaN)/aluminum indium nitride
(AlInN)/aluminum indium gallium nitride (AlInGaN) tunnel electron blocking layer (EBL) is …

Efficient Carrier Confinement in AlGaN‐Based Deep‐Ultraviolet Light‐Emitting Diodes with a Composition‐Graded Electron‐Blocking Layer

WT Ye, ZJ Cheng, ZY Ren, C Li, JJ Zheng… - … status solidi (a), 2023 - Wiley Online Library
The serious electron leakage and poor transport of hole injection layers in deep‐ultraviolet
(DUV) light‐emitting diodes (LEDs) lead to an imbalance between the hole and electron …

The Effect of p-Doped AlInN Last Quantum Barrier on Carrier Concentration of 266 nm Light-Emitting Diodes Without Electron Blocking Layer

M Usman, T Jamil - Journal of Electronic Materials, 2022 - Springer
In deep ultraviolet light-emitting diodes (DUV LEDs), we numerically investigate the effect of
p-doped AlInN last quantum barrier (LQB). The p-doped AlInN LQB not only suppresses the …