Introducing crystalline rare‐earth oxides into Si technologies
The ability to integrate crystalline metal oxide dielectric barrier layers into silicon structures
can open the way for a variety of novel applications which enhances the functionality and …
can open the way for a variety of novel applications which enhances the functionality and …
[BOOK][B] Nano-CMOS gate dielectric engineering
H Wong - 2011 - books.google.com
According to Moore's Law, not only does the number of transistors in an integrated circuit
double every two years, but transistor size also decreases at a predictable rate. At the rate …
double every two years, but transistor size also decreases at a predictable rate. At the rate …
Structural and thermal properties of single crystalline epitaxial Gd2O3 and Er2O3 grown on Si (111)
R Dargis, D Williams, R Smith, E Arkun… - ECS Journal of Solid …, 2012 - iopscience.iop.org
Lattice mismatch with a substrate and difference in coefficient of thermal expansion to the
substrate induces stress and deformations in crystalline structure of epitaxially grown layers …
substrate induces stress and deformations in crystalline structure of epitaxially grown layers …
Size-dependent dielectric behaviour of magnetic Gd2O3 nanocrystals dispersed in a silica matrix
S Mukherjee, P Dasgupta, PK Jana - Journal of Physics D …, 2008 - iopscience.iop.org
Magnetic nanocrystalline Gd 2 O 3 particles have been successfully synthesized in a silica
glass matrix by the sol–gel method at calcination temperatures of 700 C and above. The …
glass matrix by the sol–gel method at calcination temperatures of 700 C and above. The …
Stability of crystalline Gd2O3 thin films on silicon during rapid thermal annealing
M Czernohorsky, D Tetzlaff, E Bugiel… - Semiconductor …, 2008 - iopscience.iop.org
We investigate the impact of rapid thermal anneals on structural and electrical properties of
crystalline Gd 2 O 3 layers grown on Si with different orientations. Due to additional oxygen …
crystalline Gd 2 O 3 layers grown on Si with different orientations. Due to additional oxygen …
Challenges in atomic-scale characterization of high-k dielectrics and metal gate electrodes for advanced CMOS gate stacks
X Zhu, J Zhu, A Li, Z Liu, N Ming - Journal of Materials Sciences and …, 2009 - jmst.org
The decreasing feature sizes in complementary metal-oxide semiconductor (CMOS)
transistor technology will require the replacement of SiO 2 with gate dielectrics that have a …
transistor technology will require the replacement of SiO 2 with gate dielectrics that have a …
Strain-induced effects on the dielectric constant for thin, crystalline rare earth oxides on silicon
Thin epitaxial rare earth oxide layers on Si exhibit K values that are much larger than the
known bulk values. We investigate the thickness dependence of that enhancement effect for …
known bulk values. We investigate the thickness dependence of that enhancement effect for …
Engineering wafer scale single-crystalline Si growth on epitaxial Gd2O3/Si (111) substrate using radio frequency sputtering for silicon on insulator application
Silicon on Insulator (SOI) technology has been the promising solution for the On-chip low-
power mixed-signal systems. However, the traditional smart-cut method for SOI wafer …
power mixed-signal systems. However, the traditional smart-cut method for SOI wafer …
Tuning of structural and dielectric properties of Gd2O3 grown on Si (001)
The structural and dielectric properties of gadolinium oxide (Gd 2 O 3) grown on Si (001)
depending on the epitaxial growth conditions were investigated. Gd 2 O 3 layers were grown …
depending on the epitaxial growth conditions were investigated. Gd 2 O 3 layers were grown …
Epitaxial lanthanide oxide thin films on Si for high-k gate dielectric application: Growth optimization and defect passivation
Epitaxial layers of insulating binary lanthanide oxides have been considered as potential
alternative to conventional SiO2 for gate dielectric application in future Si-based MOSFET …
alternative to conventional SiO2 for gate dielectric application in future Si-based MOSFET …