Analytical modeling and do** optimization for enhanced analog performance in a Ge/Si interfaced nanowire MOSFET
This paper critically investigates the effect of do** on different device characteristics of a
Ge/Si interfaced nanowire MOSFET (GSI-NWM) for analog performance enhancement. The …
Ge/Si interfaced nanowire MOSFET (GSI-NWM) for analog performance enhancement. The …
Design and analysis of polarity controlled electrically doped tunnel FET with bandgap engineering for analog/RF applications
In this paper, we investigate a polarity controlled electrically doped tunnel FET (ED-TFET)
based on the bandgap engineering for analog/RF applications. The proposed device …
based on the bandgap engineering for analog/RF applications. The proposed device …
Drain work function engineered do**-less charge plasma TFET for ambipolar suppression and RF performance improvement: a proposal, design, and investigation
A novel device configuration is presented for do**-less charge plasma tunnel FET (TFET)
for suppression of ambipolar nature with improved high-frequency figures of merit. For this …
for suppression of ambipolar nature with improved high-frequency figures of merit. For this …
Influence of gate and channel engineering on multigate MOSFETs-A review
R Ramesh - Microelectronics journal, 2017 - Elsevier
The design of CMOS circuits using nanoscale MOSFET has become very difficult nowadays
as device modeling faces new challenges such as short channel effects and mobility …
as device modeling faces new challenges such as short channel effects and mobility …
Low-K dielectric pocket and workfunction engineering for DC and analog/RF performance improvement in dual material stack gate oxide double gate TFET
In this paper, we investigate the effect of low K dielectric pocket on DC and analog/RF
performance in dual material stack gate oxide double gate tunnel field effect transistor. For …
performance in dual material stack gate oxide double gate tunnel field effect transistor. For …
Gate-all-around charge plasma-based dual material gate-stack nanowire FET for enhanced analog performance
In this paper, a gate-all-around (GAA) charge plasma-based do**less dual material gate
nanowire FET is proposed (CP-DM). This structure is further explored by adding gate-stack …
nanowire FET is proposed (CP-DM). This structure is further explored by adding gate-stack …
Analytical modelling and sensitivity analysis of Gallium Nitride-Gate Material and, dielectric engineered-Schottky nano-wire fet (GaN-GME-DE-SNW-fet) based label …
An analytical model of nanogap embedded Gallium Nitride Gate-Material and Dielectric
Engineered-Schottky Nano-Wire Field Effect Transistor (GaN-GME-DE-SNW-FET) for …
Engineered-Schottky Nano-Wire Field Effect Transistor (GaN-GME-DE-SNW-FET) for …
Approach for ambipolar behaviour suppression in tunnel FET by workfunction engineering
A dual material control gate tunnel field effect transistor (TFET) for asymmetric do** at
source and drain regions is proposed. The gate consists of three segment different …
source and drain regions is proposed. The gate consists of three segment different …
Impact of reverse gate oxide stacking on gate all around tunnel FET for high frequency analog and RF applications
We have studied the impact of the reverse gate oxide stacking technique on a typical Gate
All Around Tunnel Field Effect Transistor (GAA TFET). For this, we have compared it's …
All Around Tunnel Field Effect Transistor (GAA TFET). For this, we have compared it's …
Enhanced analog performance and high-frequency applications of dielectric engineered high-K Schottky nanowire FET
Abstract In this paper, Gallium Nitride (GaN) based Dielectric Engineered High-K GaN
Schottky Nanowire Field Effect Transistor (DE-HK-GaN-SNWFET) is examined for …
Schottky Nanowire Field Effect Transistor (DE-HK-GaN-SNWFET) is examined for …