Atomic layer deposition of conductive and semiconductive oxides

B Macco, WMM Kessels - Applied Physics Reviews, 2022 - pubs.aip.org
Conductive and semiconductive oxides constitute a class of materials of which the electrical
conductivity and optical transparency can be modulated through material design (eg, do** …

Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors

JY Kwon, JK Jeong - Semiconductor Science and Technology, 2015 - iopscience.iop.org
This review gives an overview of the recent progress in vacuum-based n-type transition
metal oxide (TMO) thin film transistors (TFTs). Several excellent review papers regarding …

Synthesis of doped, ternary, and quaternary materials by atomic layer deposition: a review

AJM Mackus, JR Schneider, C MacIsaac… - Chemistry of …, 2018 - ACS Publications
In the past decade, atomic layer deposition (ALD) has become an important thin film
deposition technique for applications in nanoelectronics, catalysis, and other areas due to its …

[PDF][PDF] Improved Cu 2 O-based solar cells using atomic layer deposition to control the Cu oxidation state at the pn junction

SW Lee, YS Lee, J Heo, SC Siah… - Advanced Energy …, 2014 - dash.harvard.edu
DOI: 10 Page 1 Improved Cu 2 O-Based Solar Cells Using Atomic Layer Deposition to
Control the Cu Oxidation State at the pn Junction Citation Lee, Sang Woon, Yun Seog Lee …

Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells

YS Lee, J Heo, SC Siah, JP Mailoa… - Energy & …, 2013 - pubs.rsc.org
We demonstrate a tunable electron-blocking layer to enhance the performance of an Earth-
abundant metal-oxide solar-cell material. A 5 nm thick amorphous ternary metal-oxide buffer …

Amorphous oxide semiconductors: From fundamental properties to practical applications

B Lu, F Zhuge, Y Zhao, YJ Zeng, L Zhang… - Current Opinion in Solid …, 2023 - Elsevier
Amorphous oxide semiconductors (AOSs) have exceptional features of high visible
transparency, high carrier mobility, excellent uniformity, and low-temperature growth …

Stable and high-performance flexible ZnO thin-film transistors by atomic layer deposition

YY Lin, CC Hsu, MH Tseng, JJ Shyue… - ACS applied materials & …, 2015 - ACS Publications
Passivation is a challenging issue for the oxide thin-film transistor (TFT) technologies
because it requires prolonged high-temperature annealing treatments to remedy defects …

Enhanced Heterojunction Interface Quality To Achieve 9.3% Efficient Cd-Free Cu2ZnSnS4 Solar Cells Using Atomic Layer Deposition ZnSnO Buffer Layer

X Cui, K Sun, J Huang, CY Lee, C Yan… - Chemistry of …, 2018 - ACS Publications
Kesterite Cu2ZnSnS4 (CZTS) photovoltaics have been comprehensively investigated in the
past decades but are still hampered by a relatively large open circuit voltage (V oc) deficit …

Nitrogen-doped cuprous oxide as a p-type hole-transporting layer in thin-film solar cells

YS Lee, J Heo, MT Winkler, SC Siah, SB Kim… - Journal of Materials …, 2013 - pubs.rsc.org
We demonstrate the potential of a nitrogen-doped cuprous oxide (Cu2O: N) film as a p-type
hole-transporting layer for photovoltaic devices. To reduce back-contact resistance and …

Area-selective atomic layer deposition patterned by electrohydrodynamic jet printing for additive manufacturing of functional materials and devices

TH Cho, N Farjam, CR Allemang, CP Pannier… - ACS …, 2020 - ACS Publications
There is an increasing interest in additive nanomanufacturing processes, which enable
customizable patterning of functional materials and devices on a wide range of substrates …