In this paper, the impact of ferroelectric layer thickness (t FE) on input drain current
characteristic is reported in ferroelectric tunnel junction (FTJ) TFET through TCAD simulator …

In this paper a new ferro material embedded structure is introduced between the tunneling
junction to gain and improve ON/OFF current ratio with steeper subthreshold slope. Various …

In this work, a triple metal gate-ferroelectric material-with SiGe heterojunction based vertical
structure of Tunnel field effect transistor (TMG-FE-SiGe-VTFET) is proposed and …

This paper basically proposes and compares three different configurations of ferroelectric
oxide material on silicon body of vertical tunnel field-effect transistor. The charge plasma …

The effect of ferroelectric material at tunneling junction is compared for the two different
configuration of Charge plasma and Junctionless of Vertical TFET structure. Various …

In this work, a gate stack Silicon doped HfO2 ferroelectric vertical TFET is proposed and its
various performance parameters are investigated and compared with the high-K HfO2 …

In this work, the influence of interface trap charges (ITCs) on electrical parameters of gate
stacked heterojunction silicon on insulator Tunnel FET (GSHJ-SOITFET) and GSHJ-TFET on …

This paper presents a novel 2D analytical model for investigating the influence of the
ferroelectric dielectric on the performance of pocket doped double gate tunnel FET. It takes …

In this paper, the effect of ferroelectric (FE) layer thickness (t FE), coercive field (E c),
remnant polarization (P r) and saturation polarization (P s) on the transfer characteristic is …

In this study, we have reported TCAD assessment-based analyses of DC, RF/analog, and
linearity/intermodulation distortions of a triple-material-gate (TMG) electrode-based InAs/Si …