We found that the atomic-concentration-ratio of carbon to silicon (C/Si ratio) in silicon
carbide (SiC) films formed by thermal chemical vapor deposition (CVD) was much greater …

The morphology and microstructure of 3C-SiC thin films grown on Si (111) substrate by
chemical vapor deposition at ambient pressure has been investigated. Hexamethyldisilane …

A facile fluidized bed chemical vapor deposition method was proposed for the synthesis of
monodisperse SiC nanoparticles by using the single precursor of hexamethyldisilane …

Injection of precursor molecules into a plasma often results in particle generation or
deposition in the source, compromising film quality and plasma operation. We present here …

Next-generation fission and fusion nuclear reactor materials will be exposed to very high
temperatures, intense neutron radiation, corrosive environments, and, mostly, all three at …

In this paper, a methodology for silicon carbide (SiC) film formation by ion beam induced
chemical vapor deposition (IBICVD) using dimethylsilane (DMS) is presented. Both pure …

To study the effect of an Si–Si bond on gas-phase reaction chemistry in the hot-wire
chemical vapor deposition (HWCVD) process with a single source alkylsilane molecule, soft …

oriented β‐SiC films were prepared by laser chemical vapor deposition using a diode laser
(wavelength: 808 nm) from a single liquid precursor of hexamethyldisilane (Si (CH 3) 3–Si …

Growth of cubic SiC has been carried out on Si (111) and (100) substrates and on 6H-SiC
Lely crystals using chemical vapor deposition at atmospheric pressure. Hexamethyldisilane …

Epitaxial β-SiC films have been successfully grown on Si (100) at substrate temperatures
considerably lower than those used during conventional CVD growth. This has been …