An overview of radiation effects on electronic devices under severe accident conditions in NPPs, rad-hardened design techniques and simulation tools
New requirements on post-accident monitoring systems in nuclear power plants pose fresh
challenges for electronic system designers and nuclear power plant personnel, in particular …
challenges for electronic system designers and nuclear power plant personnel, in particular …
Radiation effects in power systems: A review
PC Adell, LZ Scheick - IEEE Transactions on Nuclear Science, 2013 - ieeexplore.ieee.org
To guarantee mission success and minimize the risk of anomalies in space, current space-
power architectures are designed conservatively and use electronics that are several …
power architectures are designed conservatively and use electronics that are several …
Temperature-independent gate-oxide degradation monitoring of SiC MOSFETs based on junction capacitances
Gate-oxide degradation has been one of the major reliability challenges of SiC MOSFETs
and should be monitored carefully to avoid unexpected power converter failures. Various …
and should be monitored carefully to avoid unexpected power converter failures. Various …
[LIVRE][B] Reliability and failure of electronic materials and devices
M Ohring, L Kasprzak - 2014 - books.google.com
Reliability and Failure of Electronic Materials and Devices is a well-established and well-
regarded reference work offering unique, single-source coverage of most major topics …
regarded reference work offering unique, single-source coverage of most major topics …
Effect of gate-oxide degradation on electrical parameters of power MOSFETs
Gate oxide in power metal–oxide–semiconductor field effect transistors (MOSFETs)
degrades over time. The degradation leads to an accumulation of oxide-trapped charges …
degrades over time. The degradation leads to an accumulation of oxide-trapped charges …
Heavy ion irradiation effects on GaN/AlGaN high electron mobility transistor failure at off-state
Z Islam, AL Paoletta, AM Monterrosa, JD Schuler… - Microelectronics …, 2019 - Elsevier
We investigate the effects of ion irradiation on AlGaN/GaN high electron mobility electron
transistors using in-situ transmission electron microscopy. The experiments are performed …
transistors using in-situ transmission electron microscopy. The experiments are performed …
Front-end electronics for multichannel semiconductor detector systems
P Grybos - 2010 - cds.cern.ch
Front-end electronics for multichannel semiconductor detektor systems Volume 08, EuCARD
Editorial Series on Accelerator Science and Technology The monograph is devoted to many …
Editorial Series on Accelerator Science and Technology The monograph is devoted to many …
PMMA/MWCNT nanocomposite for proton radiation shielding applications
Radiation shielding in space missions is critical in order to protect astronauts, spacecraft and
payloads from radiation damage. Low atomic-number materials are efficient in shielding …
payloads from radiation damage. Low atomic-number materials are efficient in shielding …
P-channel MOSFET as ionizing radiation detector
MM Pejović, SM Pejović - Applied Radiation and Isotopes, 2023 - Elsevier
In this study, the authors examine the responses of radiation-sensitive p-channel MOSFETs
to irradiation and subsequent annealing at room temperature and higher temperatures to …
to irradiation and subsequent annealing at room temperature and higher temperatures to …
Total ionizing dose hardened and mitigation strategies in deep submicrometer CMOS and beyond
From man-made satellites and interplanetary missions to fusion power plants, electronic
equipment that needs to withstand various forms of irradiation is an essential part of their …
equipment that needs to withstand various forms of irradiation is an essential part of their …