Spintronic devices use spin instead of charge to process information and are widely
considered as promising candidates for next-generation electronic devices. In past decades …

Light elements having 2p electrons such as B, C, and N are common elements that have
played an important role in various functional materials. In particular, nitrides have long …

A simple, reliable, and self-switchable spin–orbit torque (SOT)-induced magnetization
switching in a ferromagnetic single layer is needed for the development of next generation …

We systematically investigate the Ni-Fe layer thickness (t) dependence of the anomalous
Hall effect (AHE) and anomalous Nernst effect (ANE). The AHE and ANE show different …

We report the experimental observation of net spin-orbit torques (SOT) in single conductive
ferromagnets (FMs), eg, Fe 20 Ni 80 (Py), Co, and Ni, despite the system symmetry …

Magnetization in a ferromagnetic layer could be manipulated by the spin-orbit torque whose
generation commonly relies on the spin-orbit coupling from the adjacent heavy-metal layer …

Unidirectional magnetoresistance (UMR) in a ferromagnetic bilayer due to the spin Hall
effect (SHE) provides a facile means of probing in-plane magnetization to avoid complex …

With the advent of the Big Data era, neuromorphic computing (NC)(also known as brain‐
inspired computing) has gained a lot of research interest. Spintronic devices are the …

We report the observation of a unidirectional magnetoresistance (UMR) that originates from
the nonequilibrium orbital momentum induced by an electric current in a naturally oxidized …

Oxide thin films and interfaces with strong spin-orbit coupling have recently shown
exceptionally high charge-to-spin conversion, making them potential spin-source materials …