II–IV–V2 materials offer the promise of enhanced functionality in optoelectronic devices due
to their rich ternary chemistry. In this review, we consider the potential for new optoelectronic …

Structural, optoelectronic and electronic characteristics of the semiconductor chalcopyrite
XYZ2 (X= Zn, Cd; Y= Si, Sn; Z= P) are predicted using first-principleS calculations. The (PBE …

ZnSnN2 is an Earth-abundant semiconductor analogous to the III–nitrides with potential as a
solar absorber due to its direct bandgap, steep absorption onset, and disorder-driven …

ZnSnP 2, an absorber material for solar cells, transitions from an ordered chalcopyrite to a
disordered sphalerite structure at high temperatures. We investigate the electronic structure …

ZnGeN 2 and other heterovalent ternary semiconductors have important potential
applications in optoelectronics, but ordering of the cation sublattice, which can affect the …

Chalcopyrite ZnSnP 2 is an alternative photoabsorber material for solar cells because of its
controllable band gap, high absorption coefficient, and earth abundant constituents. In this …

The structure of a ZnSnAs 2 thin film epitaxially grown on an InP substrate was evaluated
using x-ray fluorescence holography. The reconstructed three-dimensional atomic images …

Implementation of an optically active material on silicon has been a persistent technological
challenge. For tandem photovoltaics using a Si bottom cell, as well as for other …

We report on the crystal structure of epitaxial ZnSnN 2 films synthesized via plasma-assisted
vapor deposition on (111) yttria stabilized zirconia (YSZ) and (001) lithium gallate (LiGaO 2) …

To investigate whether environmentally benign chalcopyrite phosphides may be used in the
thermoelectric energy conversion, the solid solution ZnGe1–x Sn x P2 was prepared by ball …