A review of experimental and computational advances in thermal boundary conductance and nanoscale thermal transport across solid interfaces

A Giri, PE Hopkins - Advanced Functional Materials, 2020 - Wiley Online Library
Interfacial thermal resistance is the primary impediment to heat flow in materials and devices
as characteristic lengths become comparable to the mean‐free paths of the energy carriers …

Ultrafast and nanoscale energy transduction mechanisms and coupled thermal transport across interfaces

A Giri, SG Walton, J Tomko, N Bhatt, MJ Johnson… - ACS …, 2023 - ACS Publications
The coupled interactions among the fundamental carriers of charge, heat, and
electromagnetic fields at interfaces and boundaries give rise to energetic processes that …

Thermally conductive ultra-low-k dielectric layers based on two-dimensional covalent organic frameworks

AM Evans, A Giri, VK Sangwan, S Xun, M Bartnof… - Nature materials, 2021 - nature.com
As the features of microprocessors are miniaturized, low-dielectric-constant (low-k) materials
are necessary to limit electronic crosstalk, charge build-up, and signal propagation delay …

Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

K Aryana, JT Gaskins, J Nag, DA Stewart, Z Bai… - Nature …, 2021 - nature.com
Phase change memory (PCM) is a rapidly growing technology that not only offers
advancements in storage-class memories but also enables in-memory data processing to …

Ga2O3-on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics

Y Song, D Shoemaker, JH Leach… - … Applied Materials & …, 2021 - ACS Publications
β-phase gallium oxide (Ga2O3) is an emerging ultrawide bandgap (UWBG) semiconductor
(EG∼ 4.8 eV), which promises generational improvements in the performance and …

On the thermal models for resistive random access memory circuit simulation

JB Roldán, G González-Cordero, R Picos, E Miranda… - Nanomaterials, 2021 - mdpi.com
Resistive Random Access Memories (RRAMs) are based on resistive switching (RS)
operation and exhibit a set of technological features that make them ideal candidates for …

Linear conductance update improvement of CMOS-compatible second-order memristors for fast and energy-efficient training of a neural network using a memristor …

SO Park, T Park, H Jeong, S Hong, S Seo… - Nanoscale …, 2023 - pubs.rsc.org
Memristors are two-terminal memory devices that can change the conductance state and
store analog values. Thanks to their simple structure, suitability for high-density integration …

Tunable negative photoconductivity in encapsulated ambipolar tellurene for functional optoelectronic device applications

DA Nguyen, S Cho, S Park, DY Park, HC Suh… - Nano Energy, 2023 - Elsevier
Two-dimensional tellurium (2D Te) is a promising material for functional optoelectronic
applications due to its narrow band gap and high carrier mobility. However, its light− matter …

Tensile and compressive stresses in Cu/W multilayers: Correlation with microstructure, thermal stability, and thermal conductivity

G Lorenzin, MSB Hoque, D Ariosa, LPH Jeurgens… - Acta Materialia, 2022 - Elsevier
The internal stress and microstructure in nanomultilayers strongly affect their reliability and
performance, especially towards higher service temperatures. The initial stress and …

[HTML][HTML] Substrate-dependence of monolayer MoS2 thermal conductivity and thermal boundary conductance

AJ Gabourie, Ç Köroğlu, E Pop - Journal of Applied Physics, 2022 - pubs.aip.org
The thermal properties of two-dimensional (2D) materials, such as MoS 2, are known to be
affected by interactions with their environment, but this has primarily been studied only with …