Luminescence properties of defects in GaN
Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds
have gained an unprecedented attention due to their wide-ranging applications …
have gained an unprecedented attention due to their wide-ranging applications …
Ferromagnetism of ZnO and GaN: a review
The observation of ferromagnetism in magnetic ion doped II–VI diluted magnetic
semiconductors (DMSs) and oxides, and later in (Ga, Mn) As materials has inspired a great …
semiconductors (DMSs) and oxides, and later in (Ga, Mn) As materials has inspired a great …
Measurement and analysis of photoluminescence in GaN
MA Reshchikov - Journal of applied physics, 2021 - pubs.aip.org
Photoluminescence (PL) spectroscopy is a powerful tool in studying semiconductor
properties and identifying point defects. Gallium nitride (GaN) is a remarkable …
properties and identifying point defects. Gallium nitride (GaN) is a remarkable …
Fine structure on the green band in ZnO
DC Reynolds, DC Look, B Jogai - Journal of Applied Physics, 2001 - pubs.aip.org
An emission band at 2.4 eV, called the green band, is observed in most ZnO samples, no
matter what growth technique is used. Sometimes this band includes fine structure, which …
matter what growth technique is used. Sometimes this band includes fine structure, which …
Analysis of the temperature and excitation intensity dependencies of photoluminescence in undoped GaN films
MA Reshchikov, RY Korotkov - Physical Review B, 2001 - APS
Steady-state photoluminescence (PL) from undoped wurtzite GaN has been studied in detail
over a wide range of temperatures and excitation intensities. Both the observed steps in the …
over a wide range of temperatures and excitation intensities. Both the observed steps in the …
Two yellow luminescence bands in undoped GaN
Two yellow luminescence bands related to different defects have been revealed in undoped
GaN grown by hydride vapor phase epitaxy (HVPE). One of them, labeled YL1, has the zero …
GaN grown by hydride vapor phase epitaxy (HVPE). One of them, labeled YL1, has the zero …
Donor and acceptor characteristics of native point defects in GaN
The semiconducting behaviour and optoelectronic response of gallium nitride is governed
by point defect processes, which, despite many years of research, remain poorly …
by point defect processes, which, despite many years of research, remain poorly …
Tunable and abrupt thermal quenching of photoluminescence in high-resistivity Zn-doped GaN
MA Reshchikov, AA Kvasov, MF Bishop… - Physical Review B …, 2011 - APS
Tunable and abrupt thermal quenching of photoluminescence by increasing temperature
has been observed for the blue band in high-resistivity Zn-doped GaN. The …
has been observed for the blue band in high-resistivity Zn-doped GaN. The …
Optical properties of the deep Mn acceptor in GaN: Mn
RY Korotkov, JM Gregie, BW Wessels - Applied Physics Letters, 2002 - pubs.aip.org
The optical and electrical properties of Mn-doped epitaxial GaN were studied. Low-
temperature optical absorption measurements indicate the presence of a Mn-related band …
temperature optical absorption measurements indicate the presence of a Mn-related band …
Zero-phonon line and fine structure of the yellow luminescence band in GaN
The yellow luminescence band was studied in undoped and Si-doped GaN samples by
steady-state and time-resolved photoluminescence. At low temperature (18 K), the zero …
steady-state and time-resolved photoluminescence. At low temperature (18 K), the zero …