New developments in theoretical studies of defects and impurities in III-Nitrides as pertinent
to compensation and recombination in these materials are discussed. New results on …

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …

This paper critically investigates the advantages and limitations of the current-transient
methods used for the study of the deep levels in GaN-based high-electron mobility …

Trap** is one of the most deleterious effects that limit performance and reliability in GaN
HEMTs. In this paper, we present a methodology to study trap** characteristics in GaN …

Flexible gallium nitride (GaN) thin films can enable future strainable and conformal devices
for transmission of radio‐frequency (RF) signals over large distances for more efficient …

This paper presents a fast methodology for the investigation of trap** and hot-electron
effects in GaN-based high-electron mobility transistors (HEMTs). The presented method is …

The role of carbon-related traps in GaN-based ungated high-electron mobility transistor
structures has been investigated both experimentally and by means of numerical …

Slow trap** phenomenon in AlGaN/GaN HEMTs has been extensively analyzed and
described in this paper. Thanks to a detailed investigation, based on a combined pulsed and …

Trap** phenomena degrade the dynamic performance of wide-bandgap transistors.
However, the identification of the related traps is challenging, especially in presence of non …

This paper reports on an extensive analysis of the trap** processes and of the reliability of
experimental AlGaN/GaN MIS-HEMTs, grown on silicon substrate. The study is based on …