Dislocations in crystalline silicon solar cells

L Wang, J Liu, Y Li, G Wei, Q Li, Z Fan… - Advanced Energy …, 2024 - Wiley Online Library
Dislocation is a common extended defect in crystalline silicon solar cells, which affects the
recombination characteristics of solar cells by forming deep‐level defect states in the silicon …

Relativistic quantum effects of confining potentials on the Klein-Gordon oscillator

RLL Vitória, K Bakke - The European Physical Journal Plus, 2016 - Springer
The behaviour of the Klein-Gordon oscillator under the influence of linear and Coulomb-type
potentials is investigated. The introduction of the scalar potentials is made by modifying the …

Dislocations as active components in novel silicon devices

M Kittler, M Reiche - Advanced Engineering Materials, 2009 - Wiley Online Library
The electrical and optical properties of dislocations in Si are reviewed, namely dislocation‐
related recombination and luminescence, transport of minority and majority carriers along …

Aharonov‐Bohm Effect for Bound States on the Confinement of a Relativistic Scalar Particle to a Coulomb‐Type Potential in Kaluza‐Klein Theory

EVB Leite, H Belich, K Bakke - Advances in High Energy …, 2015 - Wiley Online Library
Based on the Kaluza‐Klein theory, we study the Aharonov‐Bohm effect for bound states for
a relativistic scalar particle subject to a Coulomb‐type potential. We introduce this scalar …

[HTML][HTML] Threading dislocation densities in semiconductor crystals: A geometric approach

K Bakke, F Moraes - Physics Letters A, 2012 - Elsevier
In this Letter, we introduce a geometric model to explain the origin of the observed shallow
levels in semiconductors threaded by a dislocation density. We show that a uniform …

Multi-color colloidal quantum dot based light emitting diodes micropatterned on siliconhole transporting layers

A Gopal, K Hoshino, S Kim, X Zhang - Nanotechnology, 2009 - iopscience.iop.org
We present a colloidal quantum dot based light emitting diode (QD-LED) which utilizes the p-
type silicon substrate as the hole transporting layer. A microcontact printing technique was …

[HTML][HTML] On the electronic properties of a single dislocation

M Reiche, M Kittler, W Erfurth, E Pippel… - Journal of Applied …, 2014 - pubs.aip.org
A detailed knowledge of the electronic properties of individual dislocations is necessary for
next generation nanodevices. Dislocations are fundamental crystal defects controlling the …

Dislocation networks formed by silicon wafer direct bonding

M Reiche - Materials Science Forum, 2008 - Trans Tech Publ
The paper reviews methods of hydrophobic wafer bonding. Hydrophobic surfaces are
obtained by removing the oxide layer from the surfaces of crystalline silicon substrates …

[HTML][HTML] Electronic and optical properties of dislocations in silicon

M Reiche, M Kittler - Crystals, 2016 - mdpi.com
Dislocations exhibit a number of exceptional electronic properties resulting in a significant
increase of the drain current of metal-oxide-semiconductor field-effect transistors (MOSFETs) …

An angular frequency dependence on the Aharonov–Casher geometric phase

PMT Barboza, K Bakke - Annals of Physics, 2015 - Elsevier
A quantum effect characterized by a dependence of the angular frequency associated with
the confinement of a neutral particle to a quantum ring on the quantum numbers of the …