The role of extended and point defects, and key impurities such as C, O, and H, on the
electrical and optical properties of GaN is reviewed. Recent progress in the development of …

GaN and related materials (especially AlGaN) have recently attracted a lot of interest for
applications in high power electronics capable of operation at elevated temperatures …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

We present a comprehensive study of the transport dynamics of electrons in the ternary
compounds, Al/sub x/Ga/sub 1-x/N and In/sub x/Ga/sub 1-x/N. Calculations are made using …

A model to explain the observed low transverse mobility in GaN by scattering of electrons at
charged dislocation lines is proposed. Filled traps along threading dislocation lines act as …

Transient electron transport and velocity overshoot in wurtzite GaN, InN, and AlN are
examined and compared with that which occurs in GaAs. For all materials, we find that …

Monte Carlo simulations of electron transport based upon an analytical representation of the
lowest conduction bands of bulk, wurtzite phase GaN are used to develop a set of transport …

Unique properties of GaN and related semiconductors make them superior for high-power
applications. The maximum density of the two-dimensional electron gas at the GaN/AlGaN …

The recent shift in focus from defense and government work to commercial wireless efforts
has caused the job of the typical microwave engineer to change dramatically. The modern …

Communication and information systems are subject to rapid and highly so phisticated
changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar …