Si/SiGe heterostructures: from material and physics to devices and circuits
DJ Paul - Semiconductor science and technology, 2004 - iopscience.iop.org
Silicon germanium (SiGe) has moved from being a research material to accounting for a
small but significant percentage of manufactured semiconductor devices. This percentage is …
small but significant percentage of manufactured semiconductor devices. This percentage is …
Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques
G Taraschi, AJ Pitera, EA Fitzgerald - Solid-State Electronics, 2004 - Elsevier
Techniques for fabricating strained Si, SiGe, and Ge on-insulator include SIMOX, Ge
condensation and wafer bonding. In this paper, a brief introduction of each method is …
condensation and wafer bonding. In this paper, a brief introduction of each method is …
Method for fabricating a semiconductor structure including a metal oxide interface with silicon
3,617,951 A 11/1971 Anderson 3,670,213 A 6/1972 Nakawaga et al. 3,766,370 A 10/1973
Walther 3,802,967 A 4/1974 Ladany et al. 3,914,137 A 10/1975 Huffman et al. 3,935,031 A …
Walther 3,802,967 A 4/1974 Ladany et al. 3,914,137 A 10/1975 Huffman et al. 3,935,031 A …
Six-band calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness
A six-band k⋅ p model has been used to study the mobility of holes in Si inversion layers for
different crystal orientations, for both compressive or tensile strain applied to the channel …
different crystal orientations, for both compressive or tensile strain applied to the channel …
Carrier-transport-enhanced channel CMOS for improved power consumption and performance
An effective way to reduce supply voltage and resulting power consumption without losing
the circuit performance of CMOS is to use CMOS structures using high carrier …
the circuit performance of CMOS is to use CMOS structures using high carrier …
Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction
T Tezuka, N Sugiyama, S Takagi - Applied Physics Letters, 2001 - pubs.aip.org
A promising fabrication method for a Si 1− x Ge x-on-insulator (SGOI) virtual substrate and
evaluation of strain in the Si layer on this SGOI substrate are presented. A 9-nm-thick SGOI …
evaluation of strain in the Si layer on this SGOI substrate are presented. A 9-nm-thick SGOI …
Physical limits of silicon transistors and circuits
RW Keyes - Reports on Progress in Physics, 2005 - iopscience.iop.org
A discussion on transistors and electronic computing including some history introduces
semiconductor devices and the motivation for miniaturization of transistors. The changing …
semiconductor devices and the motivation for miniaturization of transistors. The changing …
A novel fabrication technique of ultrathin and relaxed SiGe buffer layers with high Ge fraction for sub-100 nm strained silicon-on-insulator MOSFETs
T Tezuka, N Sugiyama, T Mizuno… - Japanese Journal of …, 2001 - iopscience.iop.org
A novel fabrication technique for relaxed and thin SiGe layers on buried oxide (BOX) layers,
ie, SiGe on insulator (SGOI), with a high Ge fraction is proposed and demonstrated for …
ie, SiGe on insulator (SGOI), with a high Ge fraction is proposed and demonstrated for …
Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization
K Toko, I Nakao, T Sadoh, T Noguchi, M Miyao - Solid-State Electronics, 2009 - Elsevier
The carrier concentration and mobility of intrinsic holes in poly-Ge films grown by solid-
phase crystallization (SPC) were investigated. The two-step SPC method, consisting of low …
phase crystallization (SPC) were investigated. The two-step SPC method, consisting of low …
Thin PZT‐based ferroelectric capacitors on flexible silicon for nonvolatile memory applications
A flexible version of traditional thin lead zirconium titanate ((Pb1. 1Zr0. 48Ti0. 52O3)‐(PZT))
based ferroelectric random access memory (FeRAM) on silicon shows record performance …
based ferroelectric random access memory (FeRAM) on silicon shows record performance …