Ultra-wide bandgap materials show great promise as a solution to some of the limitations of
current state of the art semiconductor technology. Among these, diamond has exhibited …

Diamond is known as an ultimate material because of its superior properties and it is
expected to be employed in next-generation power electronic devices. Progress in epitaxial …

Silicon (Si)-based semiconductor devices have long dominated the power electronics
industry and are used in almost every application involving power conversion. Examples of …

Progress in power electronic devices is currently accepted through the use of wide bandgap
materials (WBG). Among them, diamond is the material with the most promising …

The fabrication of Schottky diodes withstanding breakdown voltages up to 10 kV is
demonstrated. A corresponding electric field of 7.7 MV/cm at the center of the diode is …

High thermal conductivity and a high breakdown field make diamond a promising candidate
for high-power and high-temperature semiconductor devices. Diamond also has a higher …

The effects of pressure and sliding velocity on the interface friction behavior during the
chemical mechanical polishing process of diamond were investigated utilizing ReaxFF …

Many new X-Ray treatment machines using small and/or non-standard radiation fields, eg,
Tomotherapy, Cyber-knife, and linear accelerators equipped with high-resolution multi-leaf …

Diamond is known as the ultimate semiconductor material for electric devices with excellent
properties such as an ultra-wide bandgap (5.47 eV), high carrier mobility (electron mobility …

Among diamond-based devices, the Schottky barrier diode (SBD) shows significant promise,
achieving high breakdown voltages (9.5 MV· cm− 1) and reduced serial resistance (1 Ω) …