Facile preparation of porous carbon cathode to eliminate paracetamol in aqueous medium using electro-Fenton system
Porous carbon cathode (PCF) was fabricated by thermal treatment at high temperature
under a nitrogen gas flow mixed with 1% of oxygen. Scanning electron microscopy results …
under a nitrogen gas flow mixed with 1% of oxygen. Scanning electron microscopy results …
Amorphous/microcrystalline transition of thick silicon film deposited by PECVD
N Elarbi, R Jemaï, A Outzourhit, K Khirouni - Applied Physics A, 2016 - Springer
Thick silicon films were deposited by plasma-enhanced chemical vapor deposition at
different plasma power densities. Annealing treatment was performed on these deposited …
different plasma power densities. Annealing treatment was performed on these deposited …
Optoelectronic effect of porous silicon surface treatment with samarium ions for different deposition times and characterizations
The goal of the present investigation is to reduce the stress, strain, and defects of porous
silicon through a passivation process. We have investigated different layers of porous silicon …
silicon through a passivation process. We have investigated different layers of porous silicon …
Enhancement of silicon nanowire opto-electric properties by combining acid vapor etching and lithium pore-filling
In this paper, we report a novel method combining acid vapor etching (AVE) and Lithium (Li)
pore-filling aiming to enhance the opto-electrical properties of silicon nanowires (SiNWs) …
pore-filling aiming to enhance the opto-electrical properties of silicon nanowires (SiNWs) …
The Variation of Crystalline Structure Induced by Gas Dilution and Thermal Annealing in Silicon Layers Deposited by PECVD Technique
N El Arbi, R Jemai, K Khirouni, H Khemakhem - Silicon, 2019 - Springer
We prepared hydrogenated thick silicon film by plasma enhanced chemical vapor
deposition (PECVD) method using SiH 4 and H 2 gas mixture and we investigated the effect …
deposition (PECVD) method using SiH 4 and H 2 gas mixture and we investigated the effect …
Passive and Active Optical Components for Optoelectronics Based on Porous Silicon
RS Dubey - Porous Silicon: From formation To Application …, 2016 - books.google.com
Interconnects has become a primary bottleneck in integrated circuit design. Due to
continuous scaling of CMOS technology, in the coming future it will be more challenging to …
continuous scaling of CMOS technology, in the coming future it will be more challenging to …
Optical Components for Optoelectronics Based on Porous Silicon
RS Dubey - api.taylorfrancis.com
Interconnects has become a primary bottleneck in integrated circuit design. Due to
continuous scaling of CMOS technology, in the coming future it will be more challenging to …
continuous scaling of CMOS technology, in the coming future it will be more challenging to …
[CITATION][C] 稀土 Er^(3+)/Yb^(3+) 掺杂对多孔硅结构和光致发光性能的影响
张春玲， 唐蕾， 张会**， 姚江宏 - 功能材料, 2016