Impact of gate–source overlap on the device/circuit analog performance of line TFETs
A Acharya, AB Solanki, S Glass… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
The gate–source overlap length () in the line tunneling FET (L-TFET) can be used as a
design parameter to improve the analog circuit performance. In this paper, we investigate …
design parameter to improve the analog circuit performance. In this paper, we investigate …
Improved cut-off frequency for cylindrical gate TFET using source delta do**
The radio-frequency (RF) performance of delta-doped cylindrical gate Tunnel FET (DCG-
TFET) has been investigated and compared with conventional CG-TFET in terms of total …
TFET) has been investigated and compared with conventional CG-TFET in terms of total …
[BOOK][B] Stress and strain engineering at nanoscale in semiconductor devices
CK Maiti - 2021 - books.google.com
Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts
are being made to co-integrate various functionalities (More-than-Moore) in a single chip …
are being made to co-integrate various functionalities (More-than-Moore) in a single chip …
Characteristic fluctuations of dynamic power delay induced by random nanosized titanium nitride grains and the aspect ratio effect of gate-all-around nanowire CMOS …
In this study, we investigate direct current (DC)/alternating current (AC) characteristic
variability induced by work function fluctuation (WKF) with respect to different nanosized …
variability induced by work function fluctuation (WKF) with respect to different nanosized …
Extensive electrostatic investigation of workfunction-modulated SOI tunnel FETs
An analytical model for the silicon-on-insulator (SOI) tunnel field-effect transistor (FET) with
linearly graded workfunction-modulated gate is proposed to improve device performance …
linearly graded workfunction-modulated gate is proposed to improve device performance …
Statistical Analysis of Metal Gate Work-Function Variation on Analog/RF Performance for Nanometer MOSFETs
J Xue, L Chen, W Lyu - Journal of Computer-Aided Design & Computer …, 2018 - jcad.cn
As integrated circuit enters nanometer scale, the number of grains in the metal gate
decreased significantly, and the work-function variability (WFV) has played an important role …
decreased significantly, and the work-function variability (WFV) has played an important role …
Investigation on Gate Capacitances Fluctuation Due to Work-Function Variation in Metal-Gate FinFETs
WF Lü, M Lin, H Zhang - Fuzzy Systems and Data Mining III, 2017 - ebooks.iospress.nl
This paper considers gate capacitance fluctuation due to work-function variation (WFV) in
metal-gate Fin-type field-effect-transistors (FinFETs). The study shows that there exist …
metal-gate Fin-type field-effect-transistors (FinFETs). The study shows that there exist …
金属栅功函数变异对纳米 MOSFET 模拟/射频性能影响的统计分析
薛佳帆， 戴良， 陈霖凯， 吕伟锋 - 计算机辅助设计与图形学学报, 2018 - jcad.cn
当集成电路技术进入到纳米尺度, 金属栅极上分布的晶粒显著减少, 功函数变异(WFV)
对MOSFET 器件和电路性能产生重要的影响. 文中通过偏差反向传播(POV) …
对MOSFET 器件和电路性能产生重要的影响. 文中通过偏差反向传播(POV) …