Dependence of electrical characteristics on epitaxial layer structure of AlGaN/GaN HEMTs fabricated on freestanding GaN substrates
Y Ando, R Makisako, H Takahashi… - … on Electron Devices, 2021 - ieeexplore.ieee.org
This article reports a systematic study on the effects of the epitaxial layer structure on the
electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated …
electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated …
Trap** dynamics in GaN HEMTs for millimeter-wave applications: Measurement-based characterization and technology comparison
Charge trap** effects represent a major challenge in the performance evaluation and the
measurement-based compact modeling of modern short-gate-length (ie,≤ 0.15 μm) Gallium …
measurement-based compact modeling of modern short-gate-length (ie,≤ 0.15 μm) Gallium …
Joint dual-input digital predistortion of supply-modulated RF PA by surrogate-based multi-objective optimization
A generalized dual-input digital predistortion (DPD) methodology for supply-modulated (SM)
power amplifiers (PAs) is proposed. Contrary to classical approaches, the SM and the radio …
power amplifiers (PAs) is proposed. Contrary to classical approaches, the SM and the radio …
Automatic optimization of input split and bias voltage in digitally controlled dual-input Doherty RF PAs
Digitally controlled Dual-Input Doherty Power Amplifiers (DIDPAs) are becoming
increasingly popular due to the flexible input signal splitting between the main and auxiliary …
increasingly popular due to the flexible input signal splitting between the main and auxiliary …
Label design-based ELM network for timing synchronization in OFDM systems with nonlinear distortion
Due to the nonlinear distortion in Orthogonal frequency division multiplexing (OFDM)
systems, the timing synchronization (TS) performance is inevitably degraded at the receiver …
systems, the timing synchronization (TS) performance is inevitably degraded at the receiver …
Wideband active load–pull by device output match compensation using a vector network analyzer
This work investigates wideband active load-pull (WALP) on microwave electron devices
with a standard vector network analyzer (VNA), solely using calibrated frequency-domain …
with a standard vector network analyzer (VNA), solely using calibrated frequency-domain …
Error vector magnitude measurement for power amplifiers under wideband load impedance mismatch: System-level analysis and VNA-based implementation
Abstract The Error Vector Magnitude (EVM) is a fundamental metric used in communications
to quantify the wideband distortion generated by a non-linear device subject to modulated …
to quantify the wideband distortion generated by a non-linear device subject to modulated …
A VNA-Based Wideband Measurement System for Large-Signal Characterization of Multiport Circuits
This work reports on a wideband (WB) measurement system based on a vector network
analyzer (VNA) topology for multiport large-signal measurements. The setup exploits a …
analyzer (VNA) topology for multiport large-signal measurements. The setup exploits a …
Broadband measurement of error vector magnitude for microwave vector signal generators using a vector network analyzer
A frequency-domain method is proposed for the broadband measurement of error vector
magnitude (EVM) for vector signal generators (VSGs). The technique is based on frequency …
magnitude (EVM) for vector signal generators (VSGs). The technique is based on frequency …
GaN power amplifier digital predistortion by multi-objective optimization for maximum RF output power
While digital predistortion (DPD) usually targets only the linearity performance of the radio–
frequency (RF) power amplifier (PA), this work addresses more than a single PA …
frequency (RF) power amplifier (PA), this work addresses more than a single PA …