US6573030B1 - Method for depositing an amorphous carbon layer - Google Patents
US6573030B1 - Method for depositing an amorphous carbon layer - Google Patents Method for …

ABSTRACT A method of forming an integrated circuit using an amor phous carbon film. The
amorphous carbon film is formed by thermally decomposing a gas mixture comprising a …

US PATENT DOCUMENTS 6,423,384 B1 7/2002 Khazeni et al. 6,428,894 B1* 8/2002
Babich et al................ 428,408 5,022,959 A 6, 1991 Itoh et al. 6,458,516 B1 10/2002 Ye et al …

Embodiments of a gas distribution plate for distributing gas in a processing chamber are
provided. In one embodiment, a gas distribution plate includes a diffuser plate having a …

(57) ABSTRACT A method and apparatus for depositing a low dielectric constant film by
reaction of an organosilicon compound and an oxidizing gas at a constant RF power level …

(57) ABSTRACT A faceplate for a showerhead of a Semiconductor wafer processing System
is provided. The faceplate has a plurality of gas passageways to provide a plurality of gases …

ABSTRACT A method for depositing Silicon oxide layers having a low dielectric constant by
reaction of an organosilicon com pound and a hydroxyl forming compound at a Substrate …

SUMMARY OF THE INVENTION A gas distribution plate assembly and a method for
distributing gas in a processing chamber are provided. In one embodiment, a gas …

(57) ABSTRACT A method of forming an integrated circuit using an amor phous carbon film.
The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a …

(57) ABSTRACT A method of cleaning a UV irradiation chamber includes steps of:(i) after
completion of irradiating a Substrate with UV light transmitted through an optical transmitted …