Time-resolved or time-correlation measurements using cathodoluminescence (CL) reveal
the electronic and optical properties of semiconductors, such as their carrier lifetimes, at the …

Graphene has great potential for fabrication of ultrafast opto-electronics, in which relaxation
and transport of photoexcited carriers determine device performance. Even though ultrafast …

We present a joint experimental theoretical study of the coupling of coherent phonons in
bulk GaAs with a nonequilibrium electron-hole plasma following photoexcitation at the E 1 …

We study the optically induced spin polarization, spin dephasing, and diffusion in several
high-mobility two-dimensional electron systems, which are embedded in GaAs quantum …

A novel ultrafast reflective grating-imaging technique has been developed to measure
ambipolar carrier diffusion in GaAs/AlAs quantum wells and bulk GaAs. By integrating a …

Diverse ultrafast dynamics have been reported on different graphene prepared by different
methods. Chemical-vapor-deposited (CVD) growth is regarded as a very promising method …

A new simple method is proposed to extract the ambipolar diffusion length for two-
dimensional (2D) electronic transport in thin film structures using a scanning …

A circular dichromatic transient absorption difference spectroscopy of transmission-grating-
photomasked transient spin grating is developed and formularized. It is very simple in …

In this study, we demonstrate a new method of scanning photoluminescence (PL)
microscopy (SPLM) to directly extract the ambipolar diffusion length in a GaAs thin film. The …

Conduction band electron relaxation and spin relaxation dynamics in Cd 0.96 Zn 0.04 Te
alloy are investigated using time-resolved pump-probe spectroscopy. The measured linearly …