Interest in inorganic ternary nitride materials has grown rapidly over the past few decades,
as their diverse chemistries and structures make them appealing for a variety of applications …

The unique properties of GaN nanowires grown by molecular beam epitaxy are reviewed.
These properties include the absence of residual strain, exclusion of most extended defects …

The triple bond in N2 is significantly stronger than the double bond in O2, meaning that
synthesizing nitrogen-rich nitrides typically requires activated nitrogen precursors, such as …

In the present study, using a large area roll-to-roll DC magnetron sputtering system
deposition of ITO thin films on polyethylene terephthalate (PET) substrates were achieved. In …

Ciprofloxacin (CFX) is a widely used second-generation fluoroquinolone, broad-spectrum
antibiotic. Increasingly, it has been detected in water supplies and has been shown to be …

Indium gallium nitride alloy (0001) films in the entire composition range were grown
heteroepitaxially by radio‐frequency plasma assisted molecular beam epitaxy on Ga …

Utilizing a modified nitrogen plasma source, plasma assisted molecular beam epitaxy
(PAMBE) has been used to achieve higher growth rates in GaN. A higher conductance …

Scandium nitride (ScN) films were grown on (100) MgO single crystals by a molecular beam
epitaxy method. The effects of growth conditions, including [Sc]/[N] ratio, growth temperature …

In the present study, the authors report on a modified Riber radio frequency (RF) nitrogen
plasma source that provides active nitrogen fluxes more than 30 times higher than those …

GaN have sphalerite structure (Cubic-GaN) and wurtzite structure (hexagonal GaN). We
report the H-GaN epilayer with a LT-AlN buffer layer has been grown on Si (111) substrate …