The advent of the novel in-sensor/near-sensor computing paradigm significantly eliminates
the need for frequent data transfer between sensory terminals and processing units by …

Increasing the demand for object motion detection (OMD) requires shifts of reducing
redundancy, heightened power efficiency, and precise programming capabilities to ensure …

Ferroelectric tunnel junctions (FTJs) have gained substantial attention as emerging
electronic devices such as nonvolatile memory and artificial synapse, owing to their low …

The development of neuromorphic hardware capable of detecting and recognizing moving
targets through an in-sensor computing strategy is considered to be an important component …

In the era of data-centric computing, the quantity of data is expected to increase
exponentially. The physical separation of memory and processing units in traditional …

Utilizing the correlation among diverse physical properties to facilitate multiplexing and
multistate memory is anticipated to emerge as an efficient strategy to enhance memory …

Ferroelectric materials commonly serve as gate insulators in typical field‐effect transistors,
where their polarization reversal enables effective modulation of the conductivity state of the …

With advancements in artificial neural networks and information processing technology, a
variety of neuromorphic synaptic devices have been proposed to emulate human sensory …

This special issue spans a diverse array of topics, including nanomedicine, tissue
engineering, regenerative medicine, organs-on-chips, biosensing, soft robotics, smart …

Ferroelectric semiconductor transistor is a newly proposed device that uses ferroelectric
semiconductors as channel materials for integrated memory and computation. Currently, the …