Recent changes in how people consume multimedia services are causing an explosive
increase in mobile traffic. With more and more people using wireless networks, the demand …

We present an overview of solid-state integrated circuit amplifiers approaching terahertz
frequencies based on the latest device technologies which have emerged in the past …

Wireless data rates are expected to be around 10Gbps or even more within the upcoming
decade. The realization of such high data rates is unlikely with the currently licensed bands …

This invited paper reviews the progress of silicon–germanium (SiGe) bipolar-complementary
metal–oxide–semiconductor (BiCMOS) technology-based integrated circuits (ICs) during the …

We present a design of a tunable terahertz (THz) filter (TTF) used in an indoor
communication system. The unit cell of TTF is composed of ring-shaped and cross-shaped …

A SiGe HBT technology featuring f T/f max/BV CEO= 300GHz/500GHz/1.6 V and a minimum
CML ring oscillator gate delay of 2.0 ps is presented. The speed-improvement compared to …

This paper presents design and characterization of single-chip 110-170-GHz (D-band) direct
conversion in-phase/quadrature-phase (I/Q) transmitter (TX) and receiver (RX) monolithic …

In this paper, a miniaturized D-band frequency-modulated continuous-wave (FMCW) radar
sensor with 48-GHz bandwidth (32.8%, 122-170 GHz) and a high measurement rate of> 1 …

A 325-GHz× 18 frequency multiplier chain implemented in af τ/f max= 250 GHz/380 GHz
evaluation SiGe heterojunction bipolar transistor technology is presented. The chain …

Monolithically integrated 220-and 320-GHz receiver front-ends manufactured in an
engineering version of an f T/f max= 280/435-GHz SiGe technology are presented …