Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

Over the past decade, tremendous progress has been achieved in the development of
nanoscale semiconductor materials with a wide range of bandgaps by alloying different …

Direct epitaxial growth of III-Vs on silicon for optical emitters and detectors is an elusive goal.
Nanowires enable the local integration of high-quality III-V material, but advanced devices …

Controlling the properties of semiconductor/metal interfaces is a powerful method for
designing functionality and improving the performance of electrical devices. Recently …

Nanowires are filamentary crystals with a tailored diameter that can be obtained using a
plethora of different synthesis techniques. In this review, we focus on the vapor phase …

Selective area epitaxy (SAE) can be used to grow highly uniform III–V nanostructure arrays
in a fully controllable way and is thus of great interest in both basic science and device …

Semiconductor nanowires have demonstrated exciting properties for nanophotonics,
sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic …

Semiconductor lasers, an important subfield of semiconductor photonics, have
fundamentally changed many aspects of our lives and enabled many technologies since …

Semiconductor nanowires are a class of materials recently gaining increasing interest for
solar cell applications. In this article we review the development of the field with a special …

The monolithic hetero-integration of III/V materials on Si substrates could enable a multitude
of new device applications and functionalities which would benefit from both the excellent …