Intermediate band solar cells: Recent progress and future directions
Extensive literature and publications on intermediate band solar cells (IBSCs) are reviewed.
A detailed discussion is given on the thermodynamics of solar energy conversion in IBSCs …
A detailed discussion is given on the thermodynamics of solar energy conversion in IBSCs …
Trends in the electronic structure of dilute nitride alloys
EP O'Reilly, A Lindsay, PJ Klar… - Semiconductor …, 2009 - iopscience.iop.org
The band-anticrossing (BAC) model has been widely applied to analyse the electronic
structure of dilute nitride III-VN alloys such as GaN x As 1− x. The BAC model describes the …
structure of dilute nitride III-VN alloys such as GaN x As 1− x. The BAC model describes the …
Band anticrossing in highly mismatched III–V semiconductor alloys
J Wu, W Shan, W Walukiewicz - Semiconductor Science and …, 2002 - iopscience.iop.org
In this paper we review the basic theoretical aspects as well as some important experimental
results of the band anticrossing effects in highly electronegativity-mismatched …
results of the band anticrossing effects in highly electronegativity-mismatched …
Interaction of localized electronic states with the conduction band: Band anticrossing in II-VI semiconductor ternaries
We report a strongly nonlinear pressure dependence of the band gaps and large downward
shifts of the conduction band edges as functions of composition in ZnS x Te 1− x and ZnSe y …
shifts of the conduction band edges as functions of composition in ZnS x Te 1− x and ZnSe y …
Band anticrossing in III–N–V alloys
W Shan, W Walukiewicz, KM Yu… - … status solidi (b), 2001 - Wiley Online Library
Recent high hydrostatic pressure experiments have shown that incorporation of small
amounts of nitrogen into conventional III–V compounds to form III–N–V alloys leads to …
amounts of nitrogen into conventional III–V compounds to form III–N–V alloys leads to …
Effects of nitrogen on the band structure of alloys
HP **n, CW Tu, Y Zhang, A Mascarenhas - Applied Physics Letters, 2000 - pubs.aip.org
We report that the incorporation of N in GaN x P 1− x alloys (x⩾ 0.43%) leads to a direct
band-gap behavior of GaNP. For N concentration lower than 0.43%, a series of sharp …
band-gap behavior of GaNP. For N concentration lower than 0.43%, a series of sharp …
Electronic properties of ga (in) nas alloys
A brief review on the present knowledge of the electronic properties of the Ga (In) NAs
ternary and quaternary alloys is given mainly from an experimental perspective. The …
ternary and quaternary alloys is given mainly from an experimental perspective. The …
The study of nanocrystalline cerium oxide by X-ray absorption spectroscopy
P Nachimuthu, WC Shih, RS Liu, LY Jang… - Journal of Solid State …, 2000 - Elsevier
X-ray absorption spectroscopy has been used to study the structural and electronic
properties of cerium atoms in nano-crystalline cerium oxide. These nanocrystalline cerium …
properties of cerium atoms in nano-crystalline cerium oxide. These nanocrystalline cerium …
Recombination mechanisms in GaInNAs/GaAs multiple quantum wells
A Kaschner, T Lüttgert, H Born, A Hoffmann… - Applied Physics …, 2001 - pubs.aip.org
Recombination processes in Ga 1− x In x N y As 1− y/GaAs multiple quantum wells (MQWs)
were investigated as function of the nitrogen molar fraction. We found a pronounced S …
were investigated as function of the nitrogen molar fraction. We found a pronounced S …
Determination of the chemical composition of GaNAs using STEM HAADF imaging and STEM strain state analysis
The nitrogen concentration of GaN0. 01≤ x≤ 0.05 As1− x quantum wells was determined
from high resolution scanning transmission electron microscopy (HRSTEM) images taken …
from high resolution scanning transmission electron microscopy (HRSTEM) images taken …