A review on thermalization mechanisms and prospect absorber materials for the hot carrier solar cells

Y Zhang, X Jia, S Liu, B Zhang, K Lin, J Zhang… - Solar Energy Materials …, 2021 - Elsevier
The hot carrier solar cells (HCSCs) is one of the most promising advanced concept solar
cells. It aims to prevent or reduce the dominant energy loss from hot carrier thermalization …

Review of the mechanisms for the phonon bottleneck effect in III–V semiconductors and their application for efficient hot carrier solar cells

Y Zhang, G Conibeer, S Liu, J Zhang… - Progress in …, 2022 - Wiley Online Library
The hot carrier solar cell aims to significantly boost the power conversion efficiency through
fully utilizing the carrier thermalization energy loss. To realize such ultraefficient solar cells, it …

Hot electron relaxation dynamics in semiconductors: assessing the strength of the electron–phonon coupling from the theoretical and experimental viewpoints

J Sjakste, K Tanimura, G Barbarino… - Journal of Physics …, 2018 - iopscience.iop.org
The rapid development of the computational methods based on density functional theory, on
the one hand, and of time-, energy-, and momentum-resolved spectroscopy, on the other …

Dynamically coupled plasmon-phonon modes in GaP: An indirect-gap polar semiconductor

K Ishioka, K Brixius, U Höfer, A Rustagi, EM Thatcher… - Physical Review B, 2015 - APS
The ultrafast coupling dynamics of coherent optical phonons and the photoexcited electron-
hole plasma in the indirect gap semiconductor GaP are investigated by experiment and …

Intrinsic coherent acoustic phonons in the indirect band gap semiconductors Si and GaP

K Ishioka, A Rustagi, U Höfer, H Petek, CJ Stanton - Physical Review B, 2017 - APS
We report on the intrinsic optical generation and detection of coherent acoustic phonons at
(001)-oriented bulk Si and GaP without metallic phonon transducer structures …

Real-Time Ab Initio Investigation on Hot Electron Relaxation Dynamics in Silicon

Z Wang, Z Zheng, Q Zheng, J Zhao - The Journal of Physical …, 2024 - ACS Publications
The relaxation of hot electrons in semiconductors is pivotal for both energy harvesting
processes and optoelectronics. Utilizing a self-developed non-adiabatic molecular dynamics …

Coherent optical and acoustic phonons generated at lattice-matched GaP/Si (0 0 1) heterointerfaces

K Ishioka, A Beyer, W Stolz, K Volz… - Journal of Physics …, 2019 - iopscience.iop.org
Thin GaP films can be grown on an exact Si (0 0 1) substrate with nearly perfect lattice
match. We perform all-optical pump–probe measurements to investigate the ultrafast …

Electron-phonon relaxation and excited electron distribution in gallium nitride

VP Zhukov, VG Tyuterev, EV Chulkov… - Journal of Applied …, 2016 - pubs.aip.org
We develop a theory of energy relaxation in semiconductors and insulators highly excited by
the long-acting external irradiation. We derive the equation for the non-equilibrium …

[HTML][HTML] Temperature dependence of carrier relaxation time in gallium phosphide evaluated by photoemission measurements

F Ichihashi, T Kawaguchi, X Dong, M Kuwahara, T Ito… - AIP Advances, 2017 - pubs.aip.org
For understanding of carrier behavior in semiconductors, it is important to measure the
carrier relaxation time. In the present study, the relaxation times of inter-valley transition from …

Relaxation of highly excited carriers in wide-gap semiconductors

VG Tyuterev, VP Zhukov, PM Echenique… - Journal of Physics …, 2014 - iopscience.iop.org
The electron energy relaxation in semiconductors and insulators after high-level external
excitation is analysed by a semi-classical approach based on a kinetic equation of the …