BACKGROUND The past two decades have seen intense efforts aimed at building quantum
computing hardware with the potential to solve problems that are intractable on classical …

Topological superconductivity can emerge from the combination of conventional
superconductivity in a metal and strong spin–orbit coupling in a semiconductor when they …

Selective area epitaxy (SAE) can be used to grow highly uniform III–V nanostructure arrays
in a fully controllable way and is thus of great interest in both basic science and device …

Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via
direct epitaxial growth is a promising solution for on-chip light sources. Recent …

Semiconductor nanowires have demonstrated exciting properties for nanophotonics,
sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic …

Nanowires are natural one-dimensional channels and offer new opportunities for advanced
electronic quantum transport experiments. We review recent progress on the synthesis of …

The interplay of Dirac physics and induced superconductivity at the interface of a 3D
topological insulator (TI) with an s-wave superconductor (S) provides a new platform for …

This introductory chapter provides a brief survey on the development of epitaxial growth
techniques and points out tasks for the epitaxy of device structures. Starting from early …

Semiconductor–superconductor hybrids are widely used to realize complex quantum
phenomena, such as topological superconductivity and spins coupled to Cooper pairs …

We report a probable observation of the dc Josephson effect in mesoscopic junctions of
three and four superconductors. The devices are fabricated in a top-down fashion from a …