This article critically reviews the fabrication challenges, emerging materials (wafer, high-k
oxide, gate metal, channel materials), dimensional influences, thermal effects, growth …

In this study, for the very first time develo** of n-and p-type 3-D single-channel (SC)
FinFET and gate-all-around (GAA) Multi-Bridge-Channel FETs (MBCFET) like nanowire FET …

This work investigates the effect of single and dual-k spacer materials consisting of different
dielectric constants (k) in optimized nano-channel gate-stack nanosheet (NS-FET) …

Moore's law states that the technical innovations are being absorbed already. The device's
controllability has dramatically improved since moving from a straightforward MOSFET …

Self-heating-induced thermal degradation is a severe issue in nonplanar MOS architectures.
Especially in stacked gate-all-around (GAA) nanosheet FET (NSFET), the self-heating effect …

Tree-shaped Nanosheet FETS (NSFET) is the most dependable way to scale down the gate
lengths deep. This paper investigates the 12nm gate length (LG) n-type Tree-shaped NSFET …

In this paper, multi-channel nanowire (NW) performance is significantly improved by
symmetric and asymmetric spacer length optimization. Device performance metrics …

In this paper, the impact of scaling on the gate all around the nanosheet field effect transistor
(GAA NSFET) is assessed in detail at sub-5-nm nodes for digital and analog/RF …

According to Moore's law, there have been numerous technological advancements that are
currently being processed. The controllability of the device has improved significantly since …

In this paper the DC, analog/RF device and circuit applications of nanosheet (NS) FET is
performed. To enhance power performance co-optimization geometry parameters like NS …