The progression of carrier confinement from quantum wells to quantum dots has received
considerable interests because of the potential to improve the semiconductor laser …

Recent theoretical and experimental progress on nanolasers is reviewed with a focus on the
emission properties of devices operating with a few or even an individual semiconductor …

We have derived consistent sets of band parameters (band gaps, crystal field splittings,
band-gap deformation potentials, effective masses, and Luttinger and EP parameters) for …

I? rst heard of k· p in a course on semiconductor physics taught by my thesis adviser William
Paul at Harvard in the fall of 1956. He presented the k· p Hamiltonian as a semiempirical …

The strain fields in and around self-organized In (Ga) As∕ Ga As quantum dots (QDs)
sensitively depend on QD geometry, average InGaAs composition, and the In∕ Ga …

We present an atomistic description of the electronic and optical properties of In 0.25 Ga
0.75 N/GaN quantum wells. Our analysis accounts for fluctuations of well width, local alloy …

We present a theory of local electric polarization in crystalline solids and apply it to study the
case of wurtzite group-III nitrides. We show that a local value of the electric polarization …

Self-organized In (Ga) As/GaAs quantum dots (QDs) grown on (111) substrate are proposed
as ideal sources for the generation of entangled photon pairs. Due to the threefold rotational …

Light emitters based on the semiconductor alloy aluminum gallium nitride [(Al, Ga) N] have
gained significant attention in recent years due to their potential for a wide range of …

In this paper, we have made a systematic study of the electronic and optical properties of
InGaN based quantum dot light emitters. The valence force field model and 6× 6 k⋅ p …