Low threading dislocation density and antiphase boundary free GaAs epitaxially grown on on-axis Si (001) substrates
Epitaxial growth of III–V materials on a CMOS-compatible Si (001) substrate enables the
feasibility of mass production of low-cost and high-yield Si-based III–V optoelectronic …
feasibility of mass production of low-cost and high-yield Si-based III–V optoelectronic …
[BOOK][B] Metalorganic vapor phase epitaxy (MOVPE): Growth, materials properties, and applications
S Irvine, P Capper - 2019 - books.google.com
Systematically discusses the growth method, material properties, and applications for key
semiconductor materials MOVPE is a chemical vapor deposition technique that produces …
semiconductor materials MOVPE is a chemical vapor deposition technique that produces …
[BOOK][B] Integrated lasers on silicon
Integrated Lasers on Silicon provides a comprehensive overview of the state-of-the-art use
of lasers on silicon for photonic integration. The authors demonstrate the need for efficient …
of lasers on silicon for photonic integration. The authors demonstrate the need for efficient …
Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells
We compare the potentiality of bulk InGaPN and GaAsPN materials quasi-lattice-matched to
silicon (Si), for multi-junction solar cells application. Bandgaps of both bulk alloys are first …
silicon (Si), for multi-junction solar cells application. Bandgaps of both bulk alloys are first …
Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD–MBE growth cluster
We report on the association of Ultra High Vaccum Chemical Vapor Deposition (UHVCVD)
and Molecular Beam Epitaxy (MBE) to achieve III–V (GaP) integration on Si/Si (100) …
and Molecular Beam Epitaxy (MBE) to achieve III–V (GaP) integration on Si/Si (100) …
Density Functional Theory Simulations of Semiconductors for Photovoltaic Applications: Hybrid Organic‐Inorganic Perovskites and III/V Heterostructures
Potentialities of density functional theory (DFT) based methodologies are explored for
photovoltaic materials through the modeling of the structural and optoelectronic properties of …
photovoltaic materials through the modeling of the structural and optoelectronic properties of …
Dissolution of antiphase domain boundaries in GaAs on Si (001) via post-growth annealing
CSC Barrett, A Atassi, EL Kennon, Z Weinrich… - Journal of Materials …, 2019 - Springer
GaAs-on-Si epitaxial crystal quality has historically been limited by a number of growth-
related defects. In particular, antiphase domain boundaries (APBs) can nucleate at the …
related defects. In particular, antiphase domain boundaries (APBs) can nucleate at the …
Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on silicon
We report a structural study of molecular beam epitaxy-grown lattice-matched GaP/Si (0 0 1)
thin layers with an emphasis on the interfacial structural properties, and optical studies of …
thin layers with an emphasis on the interfacial structural properties, and optical studies of …
Abrupt GaP/Si hetero-interface using bistepped Si buffer
We evidence the influence of the quality of the starting Si surface on the III-V/Si interface
abruptness and on the formation of defects during the growth of III-V/Si heterogeneous …
abruptness and on the formation of defects during the growth of III-V/Si heterogeneous …
GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers
We demonstrate the growth of low density anti-phase boundaries, crack-free GaAs
epilayers, by Molecular Beam Epitaxy on silicon (001) substrates. The method relies on the …
epilayers, by Molecular Beam Epitaxy on silicon (001) substrates. The method relies on the …