The mid-infrared (mid-IR) is a wavelength range with a variety of technologically vital
applications in molecular sensing, security and defense, energy conservation, and …

Strained-layer quantum wells have revolutionized the performance of near-infrared diode
lasers. Two primary factors leading to the prevalence of such materials are; 1) the ability for …

Designing of a type-II nanoscale heterostructure and simulating their optical properties is
critical for many applications and remains a challenge. This paper reports designing of a …

We report a high-power single-mode InP-based 2 μm distributed feedback (DFB) laser with
a second-order buried grating and corrugated sidewalls. A second-order semiconductor …

Abstract InGaAs/GaAsSb type-II'W'quantum wells (QWs) grown on InP substrates by
metalorganic vapour phase epitaxy were investigated for potential emission wavelengths in …

The defect-trap** effectiveness of an InAsP metamorphic buffer layer (MBL) design was
investigated by studying the light-emission characteristics of InAs quantum wells grown on …

In this work, we report on the above-room-temperature continuous-wave operation of InP-
based antimony-free triangular quantum well (QW) lasers emitting up to approximately 2.4 …

We report the effect of Bi surfactant on the properties of highly strained InAs/InGaAs
triangular quantum wells grown on InP substrates. Reduced surface roughness, improved …

This work reports on InAs/In 0.53 Ga 0.47 As strain compensated quantum well structures on
InP-based metamorphic buffer to generate the type-I emission of beyond 3 μm. The …

This work reports 2.7 μm InAs/In 0.6 Ga 0.4 As quantum well lasers on InP-based
metamorphic In x Al 1− x As graded buffers. X-ray diffraction measurement shows favorable …