Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …

The role of extended and point defects, and key impurities such as C, O, and H, on the
electrical and optical properties of GaN is reviewed. Recent progress in the development of …

Studies on the long-term degradation of organic light-emitting devices (OLEDs) based on tris
(8-hydroxyquinoline) aluminum (AlQ3), the most widely used electroluminescent molecule …

A detailed theoretical picture is given for the physics of strain effects in bulk semiconductors
and surface Si, Ge, and III–V channel metal-oxide-semiconductor field-effect transistors. For …

GaN and related materials (especially AlGaN) have recently attracted a lot of interest for
applications in high power electronics capable of operation at elevated temperatures …

In this work, the first-principles computational study on the structural, elastic, electronic and
optical properties of Y _ x Ga _ 1-x Y x Ga 1-x As as a function of yttrium concentration (x) is …

Epitaxial growth of single-crystal gadolinium oxide dielectric thin films on gallium arsenide is
reported. The gadolinium oxide film has a cubic structure isomorphic to manganese oxide …

A GaAs metal–oxide–semiconductor field-effect transistor (MOSFET) with thin Al 2 O 3 gate
dielectric in nanometer (nm) range grown by atomic layer deposition is demonstrated. The …

An overview is presented of progress in GaN electronic devices for high‐power, high‐
temperature applications. The wide bandgaps of the nitride materials, their excellent …

For the first time, a III-V compound semiconductor MOSFET with the gate dielectric grown by
atomic layer deposition (ALD) is demonstrated. The novel application of the ALD process on …