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Semipolar GaN grown on foreign substrates: a review
F Scholz - Semiconductor Science and technology, 2012 - iopscience.iop.org
Non-and semipolar GaN-based optoelectronic device structures have attracted much
attention in recent years. Best results have been obtained on small bulk substrates cut from …
attention in recent years. Best results have been obtained on small bulk substrates cut from …
Development and prospects of nitride materials and devices with nonpolar surfaces
The quest to use nonpolar surfaces of nitride materials and devices started a few years ago
with the aim to avoid the strong internal electric fields in active regions of optoelec‐tronic …
with the aim to avoid the strong internal electric fields in active regions of optoelec‐tronic …
Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar {11-22} GaN bulk substrates
M Funato, M Ueda, Y Kawakami… - Japanese Journal of …, 2006 - iopscience.iop.org
We demonstrate the fabrication of blue, green, and amber InGaN/GaN light-emitting diodes
(LEDs) on semipolar {11-22} bulk GaN substrates. The {11-22} GaN substrates used in this …
(LEDs) on semipolar {11-22} bulk GaN substrates. The {11-22} GaN substrates used in this …
Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices
Abstract Growth of InGaN/GaN light-emitting devices on nonpolar or semipolar planes offers
a viable approach to reducing or eliminating the issues associated with polarization-related …
a viable approach to reducing or eliminating the issues associated with polarization-related …
Effects of strain on the band structure of group-III nitrides
We present a systematic study of strain effects on the electronic band structure of the group-
III-nitrides (AlN, GaN and InN) in the wurtzite phase. The calculations are based on density …
III-nitrides (AlN, GaN and InN) in the wurtzite phase. The calculations are based on density …
Structural TEM study of nonpolar -plane gallium nitride grown on -SiC by organometallic vapor phase epitaxy
Conventional and high-resolution electron microscopy have been applied for studying lattice
defects in nonpolar a-plane GaN grown on a 4 H-SiC substrate with an AlN buffer layer …
defects in nonpolar a-plane GaN grown on a 4 H-SiC substrate with an AlN buffer layer …
Characterization of planar semipolar gallium nitride films on sapphire substrates
Specular, planar semipolar gallium nitride films were grown by hydride vapor phase epitaxy.
Planar films of (1013) and (1122) GaN have been grown on (1010) m-plane sapphire. The in …
Planar films of (1013) and (1122) GaN have been grown on (1010) m-plane sapphire. The in …
Improved electroluminescence on nonpolar m ‐plane InGaN/GaN quantum wells LEDs
KC Kim, MC Schmidt, H Sato, F Wu… - physica status solidi …, 2007 - Wiley Online Library
Improved nonpolar m‐plane ̄1 light emitting diodes (LEDs) with a thick InGaN multi‐
quantum‐well (MQW) structure have been fabricated on low extended defect bulk m‐plane …
quantum‐well (MQW) structure have been fabricated on low extended defect bulk m‐plane …
Characterization of planar semipolar gallium nitride films on spinel substrates
Specular, planar semipolar gallium nitride films were grown by hydride vapor phase epitaxy.
This is the first report of high quality semipolar GaN films that could be used for device …
This is the first report of high quality semipolar GaN films that could be used for device …
Dislocation-free m-plane InGaN/GaN light-emitting diodes on m-plane GaN single crystals
Abstract m-Plane (10-10) nonpolar InGaN-based light emitting diodes (LEDs) with no
threading dislocations or stacking faults have been realized on m-plane GaN single crystals …
threading dislocations or stacking faults have been realized on m-plane GaN single crystals …