Silent data corruptions at scale

HD Dixit, S Pendharkar, M Beadon, C Mason… - arxiv preprint arxiv …, 2021 - arxiv.org
Silent Data Corruption (SDC) can have negative impact on large-scale infrastructure
services. SDCs are not captured by error reporting mechanisms within a Central Processing …

Reliability evaluation and analysis of FPGA-based neural network acceleration system

D Xu, Z Zhu, C Liu, Y Wang, S Zhao… - … Transactions on Very …, 2021 - ieeexplore.ieee.org
Prior works typically conducted the fault analysis of neural network accelerator computing
arrays with simulation and focused on the prediction accuracy loss of the neural network …

Ultra-thin dielectric breakdown in devices and circuits: A brief review

CH Ho, SY Kim, K Roy - Microelectronics Reliability, 2015 - Elsevier
Time-dependent dielectric breakdown (TDDB), in which the traps in oxide bulk form a
conducting path under application of stress voltage for long period of time, has emerged as …

Persistent fault analysis of neural networks on FPGA-based acceleration system

D Xu, Z Zhu, C Liu, Y Wang, H Li… - 2020 IEEE 31st …, 2020 - ieeexplore.ieee.org
The increasing hardware failures caused by the shrinking semiconductor technologies pose
substantial influence on the neural accelerators and improving the resilience of the neural …

Channel-hot-carrier degradation and bias temperature instabilities in CMOS inverters

J Martin-Martinez, S Gerardin, E Amat… - … on Electron Devices, 2009 - ieeexplore.ieee.org
The degradation of NMOS and PMOS transistors within CMOS inverters has been analyzed.
Channel-hot-carrier (CHC) degradation and/or bias temperature instabilities (BTIs) are …

Time-dependent variability related to BTI effects in MOSFETs: Impact on CMOS differential amplifiers

J Martin-Martinez, R Rodriguez… - … on Device and …, 2009 - ieeexplore.ieee.org
With the continuous transistor scaling, device mismatch related to intrinsic process variability
increases and becomes one of the most important problems to be faced during circuit …

Time-dependent dielectric breakdown (TDDB) reliability analysis of CMOS analog and radio frequency (RF) circuits

MT Saniç, MB Yelten - Analog Integrated Circuits and Signal Processing, 2018 - Springer
In this paper, a methodology to analyze the time dependent dielectric breakdown (TDDB)
reliability of CMOS analog and radio frequency (RF) circuits has been proposed and applied …

Time-dependent variability of high-k based MOS devices: Nanoscale characterization and inclusion in circuit simulators

M Nafria, R Rodriguez, M Porti… - 2011 International …, 2011 - ieeexplore.ieee.org
Integrated circuit performance and/or reliability can be compromised because of the time-
dependent variability observed in ultra-scaled devices, which arises from atomic scale …

Memory and logic lifetime simulation systems and methods

L Milor, T Liu, CC Chen - US Patent 10,514,973, 2019 - Google Patents
Aspects of the disclosed technology include a method including extracting, by a processor, a
plurality of features from one from among a layout of a circuit, a netlist of the circuit, and the …

Scalable methods for the analysis and optimization of gate oxide breakdown

J Fang, SS Sapatnekar - 2010 11th International Symposium on …, 2010 - ieeexplore.ieee.org
In this paper we first develop an analytic closed-form model for the failure probability (FP) of
a large digital circuit due to gate oxide breakdown. Our approach accounts for the fact that …