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Silent data corruptions at scale
Silent Data Corruption (SDC) can have negative impact on large-scale infrastructure
services. SDCs are not captured by error reporting mechanisms within a Central Processing …
services. SDCs are not captured by error reporting mechanisms within a Central Processing …
Reliability evaluation and analysis of FPGA-based neural network acceleration system
Prior works typically conducted the fault analysis of neural network accelerator computing
arrays with simulation and focused on the prediction accuracy loss of the neural network …
arrays with simulation and focused on the prediction accuracy loss of the neural network …
Ultra-thin dielectric breakdown in devices and circuits: A brief review
Time-dependent dielectric breakdown (TDDB), in which the traps in oxide bulk form a
conducting path under application of stress voltage for long period of time, has emerged as …
conducting path under application of stress voltage for long period of time, has emerged as …
Persistent fault analysis of neural networks on FPGA-based acceleration system
The increasing hardware failures caused by the shrinking semiconductor technologies pose
substantial influence on the neural accelerators and improving the resilience of the neural …
substantial influence on the neural accelerators and improving the resilience of the neural …
Channel-hot-carrier degradation and bias temperature instabilities in CMOS inverters
The degradation of NMOS and PMOS transistors within CMOS inverters has been analyzed.
Channel-hot-carrier (CHC) degradation and/or bias temperature instabilities (BTIs) are …
Channel-hot-carrier (CHC) degradation and/or bias temperature instabilities (BTIs) are …
Time-dependent variability related to BTI effects in MOSFETs: Impact on CMOS differential amplifiers
J Martin-Martinez, R Rodriguez… - … on Device and …, 2009 - ieeexplore.ieee.org
With the continuous transistor scaling, device mismatch related to intrinsic process variability
increases and becomes one of the most important problems to be faced during circuit …
increases and becomes one of the most important problems to be faced during circuit …
Time-dependent dielectric breakdown (TDDB) reliability analysis of CMOS analog and radio frequency (RF) circuits
In this paper, a methodology to analyze the time dependent dielectric breakdown (TDDB)
reliability of CMOS analog and radio frequency (RF) circuits has been proposed and applied …
reliability of CMOS analog and radio frequency (RF) circuits has been proposed and applied …
Time-dependent variability of high-k based MOS devices: Nanoscale characterization and inclusion in circuit simulators
M Nafria, R Rodriguez, M Porti… - 2011 International …, 2011 - ieeexplore.ieee.org
Integrated circuit performance and/or reliability can be compromised because of the time-
dependent variability observed in ultra-scaled devices, which arises from atomic scale …
dependent variability observed in ultra-scaled devices, which arises from atomic scale …
Memory and logic lifetime simulation systems and methods
Aspects of the disclosed technology include a method including extracting, by a processor, a
plurality of features from one from among a layout of a circuit, a netlist of the circuit, and the …
plurality of features from one from among a layout of a circuit, a netlist of the circuit, and the …
Scalable methods for the analysis and optimization of gate oxide breakdown
J Fang, SS Sapatnekar - 2010 11th International Symposium on …, 2010 - ieeexplore.ieee.org
In this paper we first develop an analytic closed-form model for the failure probability (FP) of
a large digital circuit due to gate oxide breakdown. Our approach accounts for the fact that …
a large digital circuit due to gate oxide breakdown. Our approach accounts for the fact that …