High-k Gate Dielectrics for Emerging Flexible and Stretchable Electronics
Recent advances in flexible and stretchable electronics (FSE), a technology diverging from
the conventional rigid silicon technology, have stimulated fundamental scientific and …
the conventional rigid silicon technology, have stimulated fundamental scientific and …
Titanium dioxide thin films by atomic layer deposition: A review
Within its rich phase diagram titanium dioxide is a truly multifunctional material with a
property palette that has been shown to span from dielectric to transparent-conducting …
property palette that has been shown to span from dielectric to transparent-conducting …
Investigation and review of the thermal, mechanical, electrical, optical, and structural properties of atomic layer deposited high-k dielectrics: Beryllium oxide, aluminum …
Atomic layer deposited (ALD) high-dielectric-constant (high-k) materials have found
extensive applications in a variety of electronic, optical, optoelectronic, and photovoltaic …
extensive applications in a variety of electronic, optical, optoelectronic, and photovoltaic …
Front passivation of Cu (In, Ga) Se2 solar cells using Al2O3: Culprits and benefits
In the past years, the strategies used to break the Cu (In, Ga) Se 2 (CIGS) light to power
conversion efficiency world record value were based on improvements of the absorber …
conversion efficiency world record value were based on improvements of the absorber …
Enhancing GaN nanowires performance through partial coverage with oxide shells
Core‐shell gallium nitride (GaN)‐based nanowires offer noteworthy opportunities for
innovation in high‐frequency opto‐and microelectronics. This work delves deeply into the …
innovation in high‐frequency opto‐and microelectronics. This work delves deeply into the …
Structure and Dielectric Property of High-k ZrO2 Films Grown by Atomic Layer Deposition Using Tetrakis(Dimethylamido)Zirconium and Ozone
J Liu, J Li, J Wu, J Sun - Nanoscale Research Letters, 2019 - Springer
Abstracts High-k metal oxide films are vital for the future development of microelectronics
technology. In this work, ZrO 2 films were grown on silicon by atomic layer deposition (ALD) …
technology. In this work, ZrO 2 films were grown on silicon by atomic layer deposition (ALD) …
Probing charge traps at the 2D semiconductor/dielectric interface
The family of 2-dimensional (2D) semiconductors is a subject of intensive scientific research
due to their potential in next-generation electronics. While offering many unique properties …
due to their potential in next-generation electronics. While offering many unique properties …
Titanium dioxide thin films obtained by atomic layer deposition promotes osteoblasts' viability and differentiation potential while inhibiting osteoclast activity—potential …
Atomic layer deposition (ALD) technology has started to attract attention as an efficient
method for obtaining bioactive, ultrathin oxide coatings. In this study, using ALD, we have …
method for obtaining bioactive, ultrathin oxide coatings. In this study, using ALD, we have …
Zirconium oxide thin films obtained by atomic layer deposition technology abolish the anti-osteogenic effect resulting from miR-21 inhibition in the pre-osteoblastic …
A Seweryn, A Pielok… - International journal …, 2020 - Taylor & Francis
Introduction The development of the field of biomaterials engineering is rapid. Various
bioactive coatings are created to improve the biocompatibility of substrates used for bone …
bioactive coatings are created to improve the biocompatibility of substrates used for bone …
Combustion-assisted low-temperature ZrO2/SnO2 films for high-performance flexible thin film transistors
B Jang, J Kim, J Lee, G Park, G Yang, J Jang… - npj Flexible …, 2024 - nature.com
We developed high-performance flexible oxide thin-film transistors (TFTs) using SnO2
semiconductor and high-k ZrO2 dielectric, both formed through combustion-assisted sol-gel …
semiconductor and high-k ZrO2 dielectric, both formed through combustion-assisted sol-gel …