This paper presents a novel high-gain transimpedance amplifier for flexible radiation
sensing systems that can be used as large-area dosimeters. The circuit is implemented with …

This paper presents a study concerning the role of channel length scaling on IGZO TFT
technology benchmark parameters, which are fabricated at temperatures not exceeding …

Although several studies have focused on the application of deep-learning techniques in
manufacturing processes, the lack of relevant datasets remains a major challenge. Hence …

Co-sputtering of SiO2 and high-κ Ta2O5 was used to make multicomponent gate dielectric
stacks for In-Ga-Zn-O thin-film transistors (IGZO TFTs) under an overall low thermal budget …

We report a high-mobility transparent Indium-Gallium-Zinc-Oxide (IGZO) thin-film transistor
(TFT) with sputtered AlO x passivation layer. The interfacial region between the IGZO layer …

This letter demonstrates an all-transparent ZnO-based phototransistor on which fluorine-
doped tin oxide, magnesium oxide, zinc oxide, and aluminum-doped zinc oxide thin films …

This paper presents a novel mostly passive Δ-Σ ADC using amorphous Indium Gallium Zinc
Oxide (a-IGZO) thin-film transistors (TFTs). The ADC circuit consists of passive elements …

This paper presents two DC‐DC converters capable of generating either positive or negative
output DC voltage using amorphous‐indium gallium zinc oxide (a‐IGZO) thin‐film transistors …

This paper presents a novel low-power analog circuit, with n-type IGZO TFTs that can
function as an adder operator or be designed to operate as a driver. Experiments were set to …

Amorphous metal oxides (AMOs) are important candidate materials for fabricating next-
generation thin-film transistors. While much attention has been directed toward the synthesis …