Telecom-wavelength (1.5 μm) single-photon emission from InP-based quantum dots
We demonstrate pronounced single-photon emission from InAs/AlGaInAs/InP quantum dots
(QDs) at wavelengths above 1.5 μm that are compatible with standard long-distance fiber …
(QDs) at wavelengths above 1.5 μm that are compatible with standard long-distance fiber …
Exciton and biexciton dynamics in single self-assembled InAs/InGaAlAs/InP quantum dash emitting near 1.55 μm
Exciton and biexciton dynamics in a single self-assembled InAs/In 0.53 Ga 0.23 Al 0.24
As/InP (001) quantum dash emitting near 1.55 μm has been investigated by micro …
As/InP (001) quantum dash emitting near 1.55 μm has been investigated by micro …
Carrier trap** and luminescence polarization in quantum dashes
We study experimentally and theoretically polarization-dependent luminescence from an
ensemble of quantum-dot-like nanostructures with a very large in-plane shape anisotropy …
ensemble of quantum-dot-like nanostructures with a very large in-plane shape anisotropy …
Telecom Wavelengths InP‐Based Quantum Dots for Quantum Communication
Quantum dots (QDs), also known as artificial atoms, are among the recently explored
hardware platforms for photonic quantum technologies. They offer a range of advantages …
hardware platforms for photonic quantum technologies. They offer a range of advantages …
Phonon-assisted radiative recombination of excitons confined in strongly anisotropic nanostructures
The influence of acoustic phonons on the emission spectra of quantum dashes (QDashes),
that are quasi-zero-dimensional epitaxial nanostructures with significant shape anisotropy …
that are quasi-zero-dimensional epitaxial nanostructures with significant shape anisotropy …
Single InAsPInP quantum dots as telecommunications-band photon sources
The optical properties of single InAs 1− x P x/InP quantum dots are investigated by spectrally
resolved and time-resolved photoluminescence measurements as a function of excitation …
resolved and time-resolved photoluminescence measurements as a function of excitation …
Excited states of neutral and charged excitons in single strongly asymmetric InP-based nanostructures emitting in the telecom C band
We investigate strongly asymmetric self-assembled nanostructures with one of the
dimensions reaching hundreds of nanometers. Close to the nanowirelike type of …
dimensions reaching hundreds of nanometers. Close to the nanowirelike type of …
Toward weak confinement regime in epitaxial nanostructures: Interdependence of spatial character of quantum confinement and wave function extension in large and …
In this paper we present a comprehensive and detailed analysis of carrier/exciton wave
function extension in large low-strain In 0.3 Ga 0.7 As quantum dots (QDs). They exhibit …
function extension in large low-strain In 0.3 Ga 0.7 As quantum dots (QDs). They exhibit …
On the applicability of a few level rate equation model to the determination of exciton versus biexciton kinetics in quasi-zero-dimensional structures
Nowadays quantum dots represent an entire class of nanostructures of various, sometimes
very sophisticated, geometries and materials used, eg, columnar quantum dots, quantum …
very sophisticated, geometries and materials used, eg, columnar quantum dots, quantum …
Height-driven linear polarization of the surface emission from quantum dashes
The influence of the nanostructure height on the polarization of the surface emission was
systematically investigated for In (Ga) As/InP quantum dashes. Polarization-resolved …
systematically investigated for In (Ga) As/InP quantum dashes. Polarization-resolved …